FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-126
• Type: N-Channel MOSFET
• VDSS Drain-Source Voltage 800
• VGS Gate-Source Voltage ±30
•  ID Drain Current-Continuous 6.6
• IDM Drain Current-Single Pulsed 26.4
• Operating Temperature Range: -55°C to +150°C

IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 800V
• Continuous Drain Current (Id): 4.1A
• Drain-Source Resistance (Rds On): 3Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 78 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 125W

2N5294 NPN Transistors 70V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 0.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5298 NPN Transistors 60V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 20-80
• Operating Temperature Range - (-65 - 150°C)

2N6107 PNP Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 7A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

2N6292 NPN Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 4MHz

MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 10A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 20
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 2MHz

BU407 NPN Transistors 150V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 150V
• Continuous Base Current (IB) - 4A
• Continuous Collector Current (IC) - 5A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

TIP31C NPN Transistors 100V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 1A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 3MHz

TIP-122 NPN Transistors 100V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)

TIP-127 PNP Transistors 100V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Operating Temperature Range - (-65 - 150°C)

TIP-122 NPN Transistors 100V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)

2N6292 NPN Transistors 70V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 4MHz

TIP31C NPN Transistors 100V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 1A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 3MHz

MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 10A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 20
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 2MHz

BU407 NPN Transistors 150V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 150V
• Continuous Base Current (IB) - 4A
• Continuous Collector Current (IC) - 5A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

TIP-127 PNP Transistors 100V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Operating Temperature Range - (-65 - 150°C)

2N6107 PNP Transistors 70V (TO-220 Package) Pack of 5

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 7A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5294 NPN Transistors 70V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 0.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

BTA140-600B Transistors 600V (TO-220 Package) Pack of 5

Specification:-

• Peak Repetitive Off-State Voltage: 600V
• On State RMS Current: 25A
• Gate Trigger Voltage Max: 1.5V
• Peak Non-Repetitive Surge Current: 190A
• Holding Current Max: 60mA

DOP55NF06 NPN Power Transistor 130 V (TO-220 Package) Pack of 5

Specification:-

• Part Number: DOP55NF06
• Package Type: TO-220
• Transistor Type: NPN
• Mounting Type: THT
• Voltage: 130 V
• Operating Temperature Range: -55°C to 150°C

BYQ28E-200E Dual Rugged Ultrafast Diode Rectifier (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Repetitive Peak Reverse Voltage: 200V
• Average Forward Current: 10A
• Diode Configuration: Dual Common Cathode
• Forward Voltage Max: 1.15V
• Reverse Recovery Time: 25ns
• Forward Surge Current: 125A

2SC4793L 230V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• VDSS Drain-Source Voltage: 230V
• Max Emitter-Base Voltage (VEBO): 5V
• Max Collector Dissipation (Pc): 2 Watt
• Max Transition Frequency (fT): 100 MHz
• Operating Temperature Range: -55°C to +150°C

TT2190 1500V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• Max. Collector Power Dissipation (Pc): 35 W
• Max. Collector-Base Voltage (Vcb): 1500 V
• Max. Collector-Emitter Voltage (Vce): 800 V
• Max. Emitter-Base Voltage (Veb): 6 V
• Max. Collector Current (Ic max): 8 A
• Operating Temperature Range: -55°C to +150°C

TT2140 1500V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type:TO-220
• Type: NPN Transistor 
• Max. Collector Current: 15A
• Max. Collector Power Dissipation (Pc): 30 W
• Max. Collector-Base Voltage (Vcb): 1500 V
• Max. Collector-Emitter Voltage (Vce): 800 V
• Max. Emitter-Base Voltage (Veb): 6 V
• Max. Collector Current (Ic max): 6 A
• Operating Temperature Range: -55°C to +150°C

TYN612 600V NPN Power Thyristor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• Current Rating:: 12 A
• Forward Voltage: 1.6 V
• Rated Repetitive Voltage: 600V
• Max. peak reverse gate voltage: 5v
• Operating Temperature Range: -40°C to +125°C

P90NF03L 30V 90A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): -30V
• Continuous Drain Current (Id): -90A
• Drain-Source Resistance (Rds On): 0.0065 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 47 nC
• Operating Temperature Range: -65 – 175°C
• Power Dissipation (Pd): 150W

IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 180A
• Drain-Source Resistance (Rds On): 4.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 210 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 370W

IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 5.6A
• Drain-Source Resistance (Rds On): 540mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 8.3 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 43W

IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 5.2A
• Drain-Source Resistance (Rds On): 0.8Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 14 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 50W

IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 57A
• Drain-Source Resistance (Rds On): 23mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 130 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 0.54 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 42 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 45W

P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 80A
• Drain-Source Resistance (Rds On): 8Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 155 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 300W

P55NF06 60V 50A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.018 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 110W

IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 17A
• Drain-Source Resistance (Rds On): 90mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 37 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 70W

IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 75V
• Continuous Drain Current (Id): 130A
• Drain-Source Resistance (Rds On): 7.8mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 250 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 330W

IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 400V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 0.54 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 53 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 134W

P30NF10/STP30NF10 100V 35A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 35A
• Drain-Source Resistance (Rds On): 0.045 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 55 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 115W

IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 8A
• Drain-Source Resistance (Rds On): 850mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 39 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 125W

IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 150V
• Continuous Drain Current (Id): 43A
• Drain-Source Resistance (Rds On): 42mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 200 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 84A
• Drain-Source Resistance (Rds On): 12mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 130 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 200W

IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 1000V
• Continuous Drain Current (Id): 3.1A
• Drain-Source Resistance (Rds On): 5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 80 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 125W

IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 400V
• Continuous Drain Current (Id): 5.5A
• Drain-Source Resistance (Rds On): 1Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 38 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 74W

IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 3.3A
• Drain-Source Resistance (Rds On): 1.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 8.2 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 36W

IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 6.2A
• Drain-Source Resistance (Rds On): 1.2Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 125W

2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 5A
• Drain-Source Resistance (Rds On): 2.5Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 137 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 45W

IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 9A
• Drain-Source Resistance (Rds On): 0.4Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 43 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 74W

IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 75V
• Continuous Drain Current (Id): 82A
• Drain-Source Resistance (Rds On): 13mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 160 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 230W

2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 6A
• Drain-Source Resistance (Rds On): 1.25 Ohms
• Gate-Source Voltage (Vgs): 3.5V
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 45W

IRFB7545 60V 95A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Channel Type: N Channel
• Drain Source Voltage: 60V
• Continuous Drain Current: 95A
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage: 3.7V
• Power Dissipation: 125W
• Operating Temperature: 175°C
• Drain Source On State Resistance: 0.0049 ohm
• Minimum Operating Temperature: -55°C
• Maximum Operating Temperature: + 175°C

IRFZ48N 55V 64A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 64A
• Drain-Source Resistance (Rds On): 0.014 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 81 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 130W

IRFI644 250V 7.9A N-Channel Power MOSFET (TO-220 package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 250V
• Continuous Drain Current (Id): 7.9A
• Drain-Source Resistance (Rds On): 0.28mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 68 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 40W

IRFBC30 600V 3.6A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 3.6A
• Drain-Source Resistance (Rds On): 2.2Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 31 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 74W

IRFB4321 150V 85A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 150V
• Continuous Drain Current (Id): 85A
• Drain-Source Resistance (Rds On): 15mOhms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 110 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 350W

IRF820 500V 2.5A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 2.5A
• Drain-Source Resistance (Rds On): 3Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 17 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 50W

IRF720 400V 3.3A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 400V
• Continuous Drain Current (Id): 3.3A
• Drain-Source Resistance (Rds On): 1.8Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 20 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 50W

IRF644 250V 14A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 250V
• Continuous Drain Current (Id): 14A
• Drain-Source Resistance (Rds On): 0.28 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 68 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 125W

IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 18A
• Drain-Source Resistance (Rds On): 0.15 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 70 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 150W

IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 169A
• Drain-Source Resistance (Rds On): 5.3mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 260 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 330W

IRF1404 40V 202A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 40V
• Continuous Drain Current (Id): 202A
• Drain-Source Resistance (Rds On): 4mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 196 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 333W

FDP090N10 100V 75A N-Channel Power Trench MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 75A
• Drain-Source Resistance (Rds On): 9mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 116 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 208W

IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -60V
• Continuous Drain Current (Id): -11A
• Drain-Source Resistance (Rds On): 0.28 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 19 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 60W

IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 74A
• Drain-Source Resistance (Rds On): 20mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 180 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -100V
• Continuous Drain Current (Id): 014A
• Drain-Source Resistance (Rds On): 0.20 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 58 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 79W

IRF9540N 100V 23A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -100V
• Continuous Drain Current (Id): -23A
• Drain-Source Resistance (Rds On): 0.117 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 97 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 140W

IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Drain-Source Resistance (Rds On): 60mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 63 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 110W

IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -6.5A
• Drain-Source Resistance (Rds On): 0.80 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 29 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 74W

IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -11A
• Drain-Source Resistance (Rds On): 0.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 44 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 125W

IRF9Z34 60V 18A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -60V
• Continuous Drain Current (Id): -18A
• Drain-Source Resistance (Rds On): 0.14 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 34 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 88W

IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -18A
• Drain-Source Resistance (Rds On): 3Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 11 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 20W

IRF9520 -100V 6.8A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -100V
• Continuous Drain Current (Id): -6.8A
• Drain-Source Resistance (Rds On): 0.48 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 18 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 48W

2SC1623S NPN Transistors 50V (SOT-23 Package) Pack of 10

Specification

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) - 90 - 600
• Max Collector-Emitter Voltage (VCE): 6V
• Max Transition Frequency (fT): 250 MHz
• Collector-Emitter Voltage (VCEO) - 50V

MPSA05S NPN Transistors 60V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 2V
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) - 60V

MPSA06S NPN Transistors 80V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 2V
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) - 80V

MPSA42S NPN Transistors 300V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 20V
• Max Transition Frequency (fT): 50 MHz
• Collector-Emitter Voltage (VCEO) - 300V

MPSA92S PNP Transistors -300V (SOT-23 Package) Pack of 10

MPSH10S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

MPSH11S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

BC237S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 120-800
• Max Transition Frequency (fT): 200 MHz
• Collector-Emitter Voltage (VCEO) : 45V

BC817S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) : 45V

BC818S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-630
• Max Collector-Emitter Voltage (VCE): 1V
• Max Transition Frequency (fT):100 MHz
• Collector-Emitter Voltage (VCEO) : 25V