2N6292 NPN Transistors 70V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 4MHz

BTA140-600B Transistors 600V (TO-220 Package) Pack of 5

Specification:-

• Peak Repetitive Off-State Voltage: 600V
• On State RMS Current: 25A
• Gate Trigger Voltage Max: 1.5V
• Peak Non-Repetitive Surge Current: 190A
• Holding Current Max: 60mA

2N5294 NPN Transistors 70V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 0.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5298 NPN Transistors 60V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 20-80
• Operating Temperature Range - (-65 - 150°C)

2N6107 PNP Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 7A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

2N6292 NPN Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 4MHz

MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 10A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 20
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 2MHz

BU407 NPN Transistors 150V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 150V
• Continuous Base Current (IB) - 4A
• Continuous Collector Current (IC) - 5A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

TIP31C NPN Transistors 100V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 1A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 3MHz

TIP-122 NPN Transistors 100V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)

TIP-127 PNP Transistors 100V (TO-220 Package) Pack of 100

Specification:-

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Operating Temperature Range - (-65 - 150°C)

TIP-122 NPN Transistors 100V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)

TIP31C NPN Transistors 100V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 1A
• Continuous Collector Current (IC) - 3A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 3MHz

MJE3055T NPN Transistors 60V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 60V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 10A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 20
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 2MHz

BU407 NPN Transistors 150V (TO-220 Package) Pack of 5

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 150V
• Continuous Base Current (IB) - 4A
• Continuous Collector Current (IC) - 5A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

TIP-127 PNP Transistors 100V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 100V
• Continuous Base Current (IB) - 120A
• Continuous Collector Current (IC) - 3A
• Operating Temperature Range - (-65 - 150°C)

2N6107 PNP Transistors 70V (TO-220 Package) Pack of 5

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 7A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N5294 NPN Transistors 70V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 0.5A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2SA812S PNP Transistors -50V (SOT-23 Package) Pack of 10

Specification

• Transistor Type  :  PNP transistor
• DC Current Gain (hFE) : 90 - 600
• Max Collector-Emitter Voltage (VCE) :  -6V
• Max Transition Frequency (fT) : 180MHz
• Collector-Emitter Voltage (VCEO): -50V

2SC1623S NPN Transistors 50V (SOT-23 Package) Pack of 10

Specification

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) - 90 - 600
• Max Collector-Emitter Voltage (VCE): 6V
• Max Transition Frequency (fT): 250 MHz
• Collector-Emitter Voltage (VCEO) - 50V

MPSA05S NPN Transistors 60V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 2V
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) - 60V

MPSA06S NPN Transistors 80V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 2V
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) - 80V

MPSA42S NPN Transistors 300V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) -  80- 250
• Max Collector-Emitter Voltage (VCE): 20V
• Max Transition Frequency (fT): 50 MHz
• Collector-Emitter Voltage (VCEO) - 300V

MPSA92S PNP Transistors -300V (SOT-23 Package) Pack of 10

MPSH10S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

MPSH11S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

BC237S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 120-800
• Max Transition Frequency (fT): 200 MHz
• Collector-Emitter Voltage (VCEO) : 45V

BC556, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage: -65volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC817S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) : 45V

BC818S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-630
• Max Collector-Emitter Voltage (VCE): 1V
• Max Transition Frequency (fT):100 MHz
• Collector-Emitter Voltage (VCEO) : 25V

BC559, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage:  -65 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC846S NPN Transistors 65V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Collector-Emitter Voltage (VCE): 5V
• Max Transition Frequency (fT):100 MHz
• Collector-Emitter Voltage (VCEO) : 65V
• Operating temperature range: -65℃ to +150℃

BC856, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage: -65 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  100 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC847S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage: 45V
• Collector current: 100mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Collector-Emitter Voltage (VCE): 5V
• Max Transition Frequency (fT):100 MHz

MPSA13 500mA 30V TO-92 Package NPN Darlington Transistors pack of 10

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Max Collector Current (IC): 500 mA
4. Max Collector-Emitter Voltage (VCE): 30V
5. Max Collector-Base Voltage (VCB): 30V
6. Max Emitter-Base Voltage (VEBO): 10V
7. Max Collector Dissipation (Pc): 625 milliWatt
8. Max Transition Frequency (fT): 125 MHz
9. Minimum & Maximum DC Current Gain (hFE): 5000
10. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

2N6520S PNP Transistors -350V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage: -350V
• Collector current: -500mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 50-200
• Max Collector-Emitter Voltage (VCE):  -10V
• Max Transition Frequency (fT): 40MHz

MPSA55S PNP Transistors -60V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -60V
• Collector current:  -500mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 80-250
• Max Transition Frequency (fT): 50 MHz

MPSA92, -500mA, -300V TO-92 Package PNP Darlington Transistors pack of 10pcs

Specification

1. Package Type: TO-92
2. Transistor Type: PNP Darlington
3. Max Collector Current (IC): -500 mA
4. Max Collector-Emitter Voltage (VCE): -300V
5. Max Collector-Base Voltage (VCB): 30V
6. Max Emitter-Base Voltage (VEBO): 10V
7. Max Collector Dissipation (Pc): 625 milliwatts
8. Max Transition Frequency (fT): 50 MHz
9. Minimum & Maximum DC Current Gain (hFE): 5000
10. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

MPSA43 500mA 200V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

• Package Type: TO-92
• Transistor Type: NPN Darlington
• Collector - Emitter voltage:  200 volts
• Collector current:  500 mA
• Gain H(fe):  80/250
• Power dissipation:  625 mW
• F(t) minimum:  50 MHz
• Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

MPSA56S PNP Transistors -80V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -80V
• Collector current:  -500mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 80-250
• Max Transition Frequency (fT): 50 MHz

MPSA42 500mA 300V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Collector emitter voltage: 300V
4. Collector base voltage: 300V
5. Emitter base voltage: 6V
6. Collector current: 500mA
7. Power dissipation: 625mW

MPSA14 500mA 30V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Collector-Emitter Voltage: 30V
4. Collector-Base Voltage: 30V
5. Emitter-Base Voltage: 10V
6. Collector Current - Continuous: 500mA

BC807S PNP Transistors -45V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -45V
• Collector current:  -500mA
• Operating temperature range: -55°C to 175°C
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz

MPSA44 300mA 400V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

1. Package Type: TO-92
2. Transistor Type: NPN Darlington
3. Collector - Emitter voltage: 400 volts
4. Collector current:  300 mA
5. Gain H(fe):  50/200
6. Power dissipation: 625 mW
7. F(t) minimum:  125 MHz
8. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

MPSA94, -300mA, -400V TO-92 Package PNP Darlington Transistors pack of 10 pcs

Specification

1. Package Type: TO-92
2. Transistor Type: PNP Darlington
3. Max Collector Current(IC): -300mA
4. Max Collector-Emitter Voltage (VCE): -400V
5. Max Collector-Base Voltage (VCB): 30V
6. Max Emitter-Base Voltage (VEBO): 10V
7. Max Collector Dissipation (Pc): 625 milliWatt
8. Max Transition Frequency (fT): 50 MHz
9. Minimum & Maximum DC Current Gain (hFE): 50/300
10. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC856S PNP Transistors 65V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  65V
• Collector current:  -100mA
• Operating temperature range: -55°C to 175°C
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Transition Frequency (fT): 100 MHz

MPSA45 300mA 350V TO-92 Package NPN Darlington Transistors pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO): 350V
2. Continuous Collector Current (IC):  300mA
3. Transition Frequency (fT):  150MHz
4. DC Current Gain (hFE): 120-800
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor

BC857S PNP Transistors -45V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -45V
• Collector current:  -100mA
• Operating temperature range: -55°C to 175°C
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Transition Frequency (fT): 100 MHz

BC549 100mA 30V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO):  30V
2. Continuous Collector Current (IC):  100mA
3. Transition Frequency (fT):  250MHz
4. DC Current Gain (hFE):  110-800
5. Operating Temperature Range:  -55 - 150°C
6. Transistor type  :  NPN Transistor

BC558, -100mA, -30V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector-Emitter voltage:  -30 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

C945, 150mA, 50V TO-92 Package General purpose NPN transistor pack of 10pcs

Specification:-

• Type:   Transistor
• Polarity:   NPN
• Collector - Emitter voltage:  50 volts
• Collector current:   -150 mA
• Power Consumption : 400 mW
• F(t) minimum:  200 MHz
• Package: TO-92

MMBT4401 600mA NPN Bipolar Transistors 40V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max: 40 V
• Collector-Base Voltage, max: 60 V
• Collector Current − Continuous, max: 0.6 A
• Collector Dissipation: 0.25 W
• DC Current Gain (hfe): 100 to 300
• Transition Frequency, min: 250 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

MMBT4401 600mA NPN Bipolar Transistors 40V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max: 40 V
• Collector-Base Voltage, max: 60 V
• Collector Current − Continuous, max: 0.6 A
• Collector Dissipation: 0.25 W
• DC Current Gain (hfe): 100 to 300
• Transition Frequency, min: 250 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT5401 300mA PNP Transistors 150V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max: 150 V
• Collector-Base Voltage, max: 160 V
• Collector Current − Continuous, max: 0.3 A
• Collector Dissipation: 0.25 W
• DC Current Gain (hfe): 60 to 240
• Transition Frequency, min: 100 MHz
• Package: SOT-23

PMBT5401 300mA PNP Transistors 150V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max: 150 V
• Collector-Base Voltage, max: 160 V
• Collector Current − Continuous, max: 0.3 A
• Collector Dissipation: 0.25 W
• DC Current Gain (hfe): 60 to 240
• Transition Frequency, min: 100 MHz
• Package: SOT-23

PMBT2222A 600mA NPN Transistors 40V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 75 V
• Maximum Power Dissipation: 250 mW
• Gain Bandwidth Product fT: 300 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT2222A 600mA NPN Transistors 40V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 75 V
• Maximum Power Dissipation: 250 mW
• Gain Bandwidth Product fT: 300 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT4403 600mA PNP Transistors 40V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 40 V
• DC Current Gain (hfe): 100 to 300
• Transition Frequency, min: 200 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT4403 600mA PNP Transistors 40V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 40 V
• DC Current Gain (hfe): 100 to 300
• Transition Frequency, min: 200 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT8550 600mA PNP Transistors 25V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  25 V
• Collector-Base Voltage, max: 40 V
• Power Dissipation: 350 mW
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

PMBT8550 600mA PNP Transistors 25V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  25 V
• Collector-Base Voltage, max: 40 V
• Power Dissipation: 350 mW
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

PMBT8050 600mA NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  25 V
• Collector-Base Voltage, max: 40 V
• Power Dissipation: 350 mW
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

PMBT8050 600mA NPN Transistors 25V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  25 V
• Collector-Base Voltage, max: 40 V
• Power Dissipation: 350 mW
• Transition Frequency, min: 100 MHz
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

PMBT5551 300mA NPN Transistors 160V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  160 V
• Collector-Base Voltage, max: 180 V
• Transition Frequency, min: 100 MHz
• Maximum Collector Current: 0.3 A
• Maximum Collector Power Dissipation (Pc): 0.25 W
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

PMBT5551 300mA NPN Transistors 160V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  160 V
• Collector-Base Voltage, max: 180 V
• Transition Frequency, min: 100 MHz
• Maximum Collector Current: 0.3 A
• Maximum Collector Power Dissipation (Pc): 0.25 W
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

TL431 100mA NPN Regulator SMD Transistors 37V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  37 V
• Transition Frequency, min: 100 MHz
• Power dissipation: 300 mW
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

TL431 100mA NPN Regulator SMD Transistors 37V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  37 V
• Transition Frequency, min: 100 MHz
• Power dissipation: 300 mW
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT2907A 600mA PNP Transistors 40V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 60 V
• Power Dissipation: 250 mW
• Transition Frequency, min: 200 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBT2907A 600mA PNP Transistors 40V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: PNP
• Collector-Emitter Voltage, max:  40 V
• Collector-Base Voltage, max: 60 V
• Power Dissipation: 250 mW
• Transition Frequency, min: 200 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBTA42 100mA NPN Transistors 300V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  300 V
• Collector-Base Voltage, max: 300 V
• Power Dissipation: 250 mW
• Transition Frequency, min: 50 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

PMBTA42 100mA NPN Transistors 300V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  300 V
• Collector-Base Voltage, max: 300 V
• Power Dissipation: 250 mW
• Transition Frequency, min: 50 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

2SA940 Transistor Silicon PNP Triple Diffused Type (TO-220) Package

Specification:-

• Type Designator: A940
• Material of Transistor: Si
• Polarity: PNP
• Maximum Collector Power Dissipation (Pc): 25 W
• Maximum Collector-Base Voltage |Vcb|: 150 V
• Maximum Collector Current |Ic max|: 1.5 A

DOP55NF06 NPN Power Transistor 130 V (TO-220 Package) Pack of 5

Specification:-

• Part Number: DOP55NF06
• Package Type: TO-220
• Transistor Type: NPN
• Mounting Type: THT
• Voltage: 130 V
• Operating Temperature Range: -55°C to 150°C

BYQ28E-200E Dual Rugged Ultrafast Diode Rectifier (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Repetitive Peak Reverse Voltage: 200V
• Average Forward Current: 10A
• Diode Configuration: Dual Common Cathode
• Forward Voltage Max: 1.15V
• Reverse Recovery Time: 25ns
• Forward Surge Current: 125A

FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-126
• Type: N-Channel MOSFET
• VDSS Drain-Source Voltage 800
• VGS Gate-Source Voltage ±30
•  ID Drain Current-Continuous 6.6
• IDM Drain Current-Single Pulsed 26.4
• Operating Temperature Range: -55°C to +150°C

2SC4793L 230V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• VDSS Drain-Source Voltage: 230V
• Max Emitter-Base Voltage (VEBO): 5V
• Max Collector Dissipation (Pc): 2 Watt
• Max Transition Frequency (fT): 100 MHz
• Operating Temperature Range: -55°C to +150°C

TT2190 1500V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• Max. Collector Power Dissipation (Pc): 35 W
• Max. Collector-Base Voltage (Vcb): 1500 V
• Max. Collector-Emitter Voltage (Vce): 800 V
• Max. Emitter-Base Voltage (Veb): 6 V
• Max. Collector Current (Ic max): 8 A
• Operating Temperature Range: -55°C to +150°C

TT2140 1500V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type:TO-220
• Type: NPN Transistor 
• Max. Collector Current: 15A
• Max. Collector Power Dissipation (Pc): 30 W
• Max. Collector-Base Voltage (Vcb): 1500 V
• Max. Collector-Emitter Voltage (Vce): 800 V
• Max. Emitter-Base Voltage (Veb): 6 V
• Max. Collector Current (Ic max): 6 A
• Operating Temperature Range: -55°C to +150°C

TYN612 600V NPN Power Thyristor (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-220
• Type: NPN Transistor 
• Current Rating:: 12 A
• Forward Voltage: 1.6 V
• Rated Repetitive Voltage: 600V
• Max. peak reverse gate voltage: 5v
• Operating Temperature Range: -40°C to +125°C

IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -60V
• Continuous Drain Current (Id): -11A
• Drain-Source Resistance (Rds On): 0.28 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 19 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 60W