IRF540 100V 33A N-channel HEXFET Power Mosfet

Specifications

1. Type : Small signal N-Channel MOSFET
2. Continuous drain current : 33A at 25°C
3. Pulsed drain current : 110A
4. Minimum gate threshold voltage : 2V
5. The maximum gate threshold voltage : 4V
6. Gate source voltage : ±20V
7. Maximum drain-source voltage : 100V

IRFI630A 200V 9A N-channel Power Mosfet

Specifications

1. Type : N - channel
2. Drain-to-Source breakdown voltage : 200 V
3. Gate-to-Source voltage, max : ±20 V
4. Drain-source On-state resistance, max : 0.400 Ohm
5. Continuous drain current : 9A
6. Total gate charge : 43 nC
7. Power dissipation : 74 W

IRF840 500V 8A N-channel Power Mosfet

Specification:-

1. N-Channel Power MOSFET
2. Continuous drain current : 8A
3. Gate threshold voltage : 10V (limit = ±20V)
4. Drain to source breakdown voltage: 500V
5. Drain source resistance : 0.85 Ohms
6. Rise time and fall time : 23nS and 20nS

IRF520 100V 9.2A N-channel Power Mosfet

Specifications

1. Type: N-Channel
2. Drain-Source Volt (Vds) : 100V
3. Drain-Gate Volt (Vdg) : 100V
4. Gate-Source Volt (Vgs) : 20V
5. Drain Current (Id) : 10A
6. Power Dissipation (Ptot): 70W

2N7000 60V 200mA N-channel Power Mosfet pack of 2pcs

Specifications

1. Transistor polarity: N-channel
2. Drain source voltage Vds: 60V
3. Continuous drain current: 200mA
4. Mounting: through hole
5. Power dissipation: 400mW
6. Resistance: 5 ohms (Ω)
7. Package includes: 2 pieces

Aluminum heatsink for IC or MOSFET or Transistor or SCR pack of 5pcs

Specifications

1. Product Name : IC Heatsink
2. Material : Aluminum
3. Color : Silver Tone;
4. Screw Hole Día : 5mm "
5. Overall Size : 31 x 10x 20mm (L*W*H)

Aluminum heatsink for IC or MOSFET or Transistors or SCR pack of 10pcs

Specifications

1. Product Name : IC Heatsink
2. Material : Aluminum
3. Color : Silver Tone;
4. Screw Hole Día : 5mm
5. Overall Size : 31 x 10x 20mm (L*W*H)

2cm x 1.5cm Aluminium heatsink for TO-220 Mosfet transistor pack of 5pcs

Product overview:-

• 100% Branded, New, and High-quality product
• Product Name : Aluminium Heatsink for TO-220 Mosfet transistor
• The material used : Aluminum
• Color : Silver Tone
• Overall Size : 2cm x 1.5cm x 1cm (L*W*H)

2cm x 1.5cm Aluminium heatsink for TO-220 Mosfet transistors pack of 20pcs

Product overview:-

• 100% Branded, New, and High-quality product
• Product Name : Aluminium Heatsink for TO-220 Mosfet transistor
• The material used : Aluminum
• Color : Silver Tone
• Overall Size : 2cm x 1.5cm x 1cm (L*W*H)

2.5cm x 1.5cm Aluminium heatsink for TO-220 Mosfet transistor pack of 5pcs

Product overview:-

• 100% Branded, New, and High-quality product
• Product Name : Aluminium Heatsink for TO-220 Mosfet transistor
• The material used : Aluminum
• Color : Silver Tone
• Overall Size : 2.5cm x 1.5cm x 1cm (L*W*H)

2.5cm x 1.5cm Aluminium heatsink for TO-220 Mosfet transistors pack of 20pcs

Product overview:-

• 100% Branded, New, and High-quality product
• Product Name : Aluminium Heatsink for TO-220 Mosfet transistor
• Material used : Aluminum
• Color : Silver Tone
• Overall Size : 2.5cm x 1.5cm x 1cm (L*W*H)

2N7000 60V 200mA N-channel Power Mosfets pack of 20pcs

Specifications

1. Transistor polarity : N-channel
2. Drain source voltage Vds : 60V
3. Continuous drain current : 200mA
4. Mounting : through hole
5. Power dissipation : 400mW
6. Resistance : 5 ohm (Ω)
7. Package includes : 20 pieces

IRF3205 55V 110A N-channel power mosfet

Specification 

1. Type                                   N channel
2. Drain- source voltage          55V
3. Gate-source voltage            ±20V
4. Drain current                       110A
5. Power Dissipation                200W

2SK3018 30V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 30v
• Drian Current - 100mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=4.0V ID=10mA
• Fast Switching speed
• Case: SOT23

IRFZ44N 55V 49A To-220 N-Channel Transistor Mosfet

Specifications

• Package Type: TO-220B (Through-Hole)
• Drain-to-Source Breakdown Voltage : 55V
• Continuous Drain Current :49A
• Static Drain-to-Source On-Resistance : 17.5mΩ
• Power Dissipation: 94W
• Total Gate Charge: 63nC
• Gate Threshold Voltage : 4V

15N120NDH Transistor IGBT with Diode 1200V 15A Transistor

Specifications

• Collector-Emitter Voltage: 1200V
• Collector Current: 15A
• Storage Temperature Range: -55 to + 150
• Diode Continuous Forward Current: 15A

H20R1203 20A 1200V Transistor IGBT (TO-247 Package)

Specifications:-

• Package Type: TO247
• Power Consumption: 155 W
• Maximum Collector Current: 20 A
• Maximum Collector Emitter Voltage: 1200 V
• Mount Type: Through Hole
• DC Current Gain: 1000

IRFS630 200V 9A N-Channel Power Mosfet

Specification:-

• Type: N - channel
• Total gate charge: 34 nC
• Continuous drain current: 9A
• Power dissipation: 35 W
• Drain-to-Source breakdown voltage: 200 V

330.5mm x 104mm Aluminum Heatsink

Specification:-

• 100% Branded, New, and High-quality product
• Product Name : Aluminum Heatsink
• The material used : Aluminum
• Color : Silver Tone
• Overall Size : 330.5mm x 104mm x 43mm (L*W*H)

IRF540 Isolation Power Module Electronic Block 4-Channel MOSFET Switch

Specification:-

• MOSFET Type: IRF540
• Number of Channels: 4
• Control Voltage: 3.3V to 5V DC
• Load Voltage: Up to 100V DC
• Load Current: Up to 33A per channel

MOSFET Based 200-watt Stereo Amplifier Circuit Board

Specification:-

• Transistor Type: MOSFET
• Power Source: AC
• Power Output: 200 watts per channel
• Operated at 24-0-24V Ac to 30-0-30V AC with 5 to 7 Amp of current
• Output Sound: 100+100 Watt two Channel Stereo Sound out put.

P75NF758 75V 80A N-Channel Power Mosfet Pack of 5

Specification:-

• Model: P75NF758
• Type: N-Channel Power MOSFET
• Drain-to-source voltage: VDSS = 75 V
• Gate-to-source voltage: VGSS = ± 20 V
• Drain current: ID = 80 A
• Channel temperature: Tch = 150 °C
• Storage temperature: Tstg = -55 to +175 °C

FQPF7N80C 800V N-Channel MOSFET (TO-220 Package) Pack of 5

Specification:-

• Package Type: TO-126
• Type: N-Channel MOSFET
• VDSS Drain-Source Voltage 800
• VGS Gate-Source Voltage ±30
•  ID Drain Current-Continuous 6.6
• IDM Drain Current-Single Pulsed 26.4
• Operating Temperature Range: -55°C to +150°C

AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 50

Specification:-

• Gate to Source Voltage: ±12V
• Power Dissipation: 1.4W 
• Number of Pins: 3
• Drain to Source Voltage: -30V
• Continuous Drain Current: 4.2 
• Input Capacitance: 645pF

AO3401-30V 4A P-Channel MOSFET SOT-23 Pack of 3000

Specification:-

• Gate to Source Voltage: ±12V
• Power Dissipation: 1.4W 
• Number of Pins: 3
• Drain to Source Voltage: -30V
• Continuous Drain Current: 4.2 
• Input Capacitance: 645pF

UC3706 Dual Output Mosfet Driver SMD IC

Specification:-

• Mounting Style: SMD/SMT
• Dual, 1.5A Totem Pole Outputs
• Voltage: 5 to 40V
• 16-Pin Dual-In-Line Package
• 20-Pin Surface Mount Package
• 40nsec Rise and Fall into 1000pF

TC4427 Power MOSFET Driver SMD IC

Specification:-

• High Peak Output Current: 1.5A
• Input Withstands Negative Inputs Up to 5V
• Input Supply Voltage Operating Range: – 4.5V to 18V
• Short Delay Times: 40 ns (typical)
• High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical)

TC4427 Power MOSFET Driver IC

Specification:-

• Supply Voltage: +22V
• Input Voltage: 730 mW
• Short Delay Times: 40 ns (typical)
• Package Power Dissipation: 50 mA
• Storage Temperature Range: -65°C to +150°C
• Maximum Junction Temperature: +150°C
• Supply Voltage Operating Range: – 4.5V to 18V
• High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical)

TC4420 6A High-Speed MOSFET Driver IC

Specification:-

• Supply Voltage: +20V
• Input Voltage: – 5V to VDD + 0.3V
• Input Current (VIN > VDD): 50 mA
• High Capacitive Load Drive Capability: 10,000 pF
• Wide Input Supply Voltage Operating Range: – 4.5V to 18V
• Package Power Dissipation 5-Pin TO-220 (With Heatsink): 12.5W
• Output Voltage Swing to Within 25 mV of Ground or VDD
• Thermal Impedances (To Case) 5-Pin TO-220: 10°C/W

MC34152P MC34152 High Speed Dual MOSFET Driver IC (DIP-8 Package)

Specification:-

• Power Supply Voltage: 20 V
• Logic Input: −0.3 to VCC V
• Gate Drive Output-Source Current: 1.5 A
• Maximum Power Dissipation = 50°C: 0.56 W
• Operating Junction Temperature: 150 °C
• Operating Ambient Temperature: 0 to +70 °C
• Storage Temperature Range: -65 to +150 °C

MC34151 High Speed Dual MOSFET Driver IC (DIP-8 Package)

Specification:-

• Power Supply Voltage: 20 V
• Logic Input: −0.3 to VCC V
• Gate Drive Output-Source Current: 1.5 A
• Maximum Power Dissipation = 50°C: 0.56 W
• Operating Junction Temperature: 150 °C
• Operating Ambient Temperature: 0 to +70 °C
• Storage Temperature Range: -65 to +150 °C
• Two Independent Channels with 1.5 A Totem Pole Output

MC33151 High Speed Dual MOSFET Driver IC (DIP-8 Package)

Specification:-

• Power Supply Voltage: 20 V
• Logic Input: VEE −0.3 to VCC V
• Totem Pole Sink or Source Current: 1.5 A
• Maximum Power Dissipation  = 50°C: 0.56 W
• Maximum Power Dissipation = 50°C: 1W
• Operating Junction Temperature: 150 °C
• Operating Ambient Temperature: 0 to 70 °C
• Storage Temperature Range: -65 to +150 °C

IRF9Z24 60V 11A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -60V
• Continuous Drain Current (Id): -11A
• Drain-Source Resistance (Rds On): 0.28 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 19 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 60W

P90NF03L 30V 90A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): -30V
• Continuous Drain Current (Id): -90A
• Drain-Source Resistance (Rds On): 0.0065 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 47 nC
• Operating Temperature Range: -65 – 175°C
• Power Dissipation (Pd): 150W

IRFP260N 200V 50A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.04 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 234 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 300W

IRFP250N 200V 30A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 30A
• Drain-Source Resistance (Rds On): 0.075 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 123 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 214W

IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 180A
• Drain-Source Resistance (Rds On): 4.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 210 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 370W

IRF510 100V 5.6A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 5.6A
• Drain-Source Resistance (Rds On): 540mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 8.3 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 43W

IRF620 200V 5.2A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 5.2A
• Drain-Source Resistance (Rds On): 0.8Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 14 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 50W

BSS138 50V N-Channel Enhancement Mode MOSFET

Specification:-

• Drain-Source Voltage: 50 V
• Gate-Source Voltage: ± 20 V
• Drain Current Continuous: 200 mA
• Drain Current Pulsed (tp≤10µS): 800 mA
• Drain Power Dissipation: 225 mW
• Thermal Resistance, Junction to Ambient: 556°C/W
• Storage Temperature Range: -55 to +150 °C

IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 57A
• Drain-Source Resistance (Rds On): 23mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 130 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

BS170 60V 500mA N-Channel Small Signal MOSFET (TO-92 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 500 mA
• Drain-Source Resistance (Rds On): 50Ohms
• Gate-Source Voltage (Vgs): 20V
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 350W

2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 0.54 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 42 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 45W

IRF4905 55V 74A P-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 74A
• Drain-Source Resistance (Rds On): 20mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 180 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

2SK962 900V 8A N-Channel Silicon Power MOSFET (TO-3P Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 8A
• Drain-Source Resistance (Rds On): 20Ohms
• Gate-Source Voltage (Vgs): 20V
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 150W

P80NF55 55V 80A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 80A
• Drain-Source Resistance (Rds On): 8Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 155 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 300W

P55NF06 60V 50A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 50A
• Drain-Source Resistance (Rds On): 0.018 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 110W

IRF9530 100V 14A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -100V
• Continuous Drain Current (Id): 014A
• Drain-Source Resistance (Rds On): 0.20 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 58 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 79W

IRF9540N 100V 23A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -100V
• Continuous Drain Current (Id): -23A
• Drain-Source Resistance (Rds On): 0.117 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 97 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 140W

IRF530 100V 17A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 17A
• Drain-Source Resistance (Rds On): 90mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 37 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 70W

IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 75V
• Continuous Drain Current (Id): 130A
• Drain-Source Resistance (Rds On): 7.8mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 250 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 330W

IRFP264N 250V 44A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): 250V
• Continuous Drain Current (Id): 44A
• Drain-Source Resistance (Rds On): 0.06 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 210 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 380W

IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -12A
• Drain-Source Resistance (Rds On): 500mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 44 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 150W

IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): 20A
• Drain-Source Resistance (Rds On): 0.18 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 70 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 150W

IRF740 400V 10A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 400V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 0.54 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 53 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 134W

IRFPG50 1000V 6.1A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 1000V
• Continuous Drain Current (Id): 6.1A
• Drain-Source Resistance (Rds On): 20Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 190 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 190W

IRFP4568 150V 171A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 150V
• Continuous Drain Current (Id): 171A
• Drain-Source Resistance (Rds On): 5.9mOhms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 227 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 517W

38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 300V
• Continuous Drain Current (Id): 38.4A
• Drain-Source Resistance (Rds On): 85mOhms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 120 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 290W

2SK3878 900V 9A N-Channel Power MOSFET (TO-3P Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 9A
• Drain-Source Resistance (Rds On): 1Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 150W

P30NF10/STP30NF10 100V 35A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 35A
• Drain-Source Resistance (Rds On): 0.045 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 55 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 115W

IRFP22N60K 600V 22A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 22A
• Drain-Source Resistance (Rds On): 0.28 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 150 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 370W

IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 33A
• Drain-Source Resistance (Rds On): 0.052 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 94 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 140W

IRFP450 500V 14A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 14A
• Drain-Source Resistance (Rds On): 370mOhms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 77 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

IRFP150N 100V 42A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 100V
• Continuous Drain Current (Id): 42A
• Drain-Source Resistance (Rds On): 0.036 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 110 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 160W

IRF840 500V 8A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 8A
• Drain-Source Resistance (Rds On): 850mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 39 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 125W

IRF5305 55V 31A P-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -55V
• Continuous Drain Current (Id): -31A
• Drain-Source Resistance (Rds On): 60mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 63 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 110W

IRF3415 150V 43A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 150V
• Continuous Drain Current (Id): 43A
• Drain-Source Resistance (Rds On): 42mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 200 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 200W

IRF1010 60V 84A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 60V
• Continuous Drain Current (Id): 84A
• Drain-Source Resistance (Rds On): 12mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 130 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 200W

IRFP054N 55V 81A N-Channel HEXFET Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 81A
• Drain-Source Resistance (Rds On): 0.012 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 130 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 170W

IRFBG30 1000V 3.1A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 1000V
• Continuous Drain Current (Id): 3.1A
• Drain-Source Resistance (Rds On): 5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 80 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 125W

IRFBG30 400V 5.5A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 400V
• Continuous Drain Current (Id): 5.5A
• Drain-Source Resistance (Rds On): 1Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 38 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 74W

IRF610 200V 3.3A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 3.3A
• Drain-Source Resistance (Rds On): 1.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 8.2 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 36W

2SK2968 900V 10A N-Channel Power MOSFET (TO-3PN Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 1.25 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 70 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 150W

2SK2611 900V 9A N-Channel Power MOSFET (TO-3PN Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 9A
• Drain-Source Resistance (Rds On): 1.1Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 58 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 150W

IRFBE30 800V 4.1A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 800V
• Continuous Drain Current (Id): 4.1A
• Drain-Source Resistance (Rds On): 3Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 78 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 125W

23N50E N-Channel Silicon Power MOSFET

Specification:-

• Type: MOSFET
• Voltage: 500V
• Drain Current: 23A
• Reverse Recovery change: 8Micro C
• Gate source voltage: 30V
• Total power dissipation: 315W
• Operating and Storage Temperature Range: -55°C TO 150°C

SI2308 N-Channel SMD MOSFET (SOT-23 Package)

Specification:-

• Drain-Source Voltage: 60 V
• Gate-Source Voltage: ± 20 V
• Drain Current Continuous: 2.3 A
• Drain Current Pulsed (tp≤10µS): 8 A
• Drain Power Dissipation: 1.66 W
• Storage Temperature Range: -55 to +15°C

IRFP044N 55V 53A N-Channel HEXFET Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 55V
• Continuous Drain Current (Id): 53A
• Drain-Source Resistance (Rds On): 0.020 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 61 nC
• Operating Temperature Range: -55 to 175°C
• Power Dissipation (Pd): 120W

IRFBC40 600V 6.2A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 6.2A
• Drain-Source Resistance (Rds On): 1.2Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 60 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 125W

IRF9630 200V 6.5A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -6.5A
• Drain-Source Resistance (Rds On): 0.80 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 29 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 74W

FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 48A
• Drain-Source Resistance (Rds On): 105mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 137 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 625W

2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 900V
• Continuous Drain Current (Id): 5A
• Drain-Source Resistance (Rds On): 2.5Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 137 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 45W

2SK2698 500V 15A N-Channel Power MOSFET (TO-3PN Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 500V
• Continuous Drain Current (Id): 15A
• Drain-Source Resistance (Rds On): 0.35 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 58 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 150W

20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 650V
• Continuous Drain Current (Id): 20.7A
• Drain-Source Resistance (Rds On): 190Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 58 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 208W

IRF9640 200V 11A P-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: P-Channel
• Drain-Source Breakdown Voltage (Vds): -200V
• Continuous Drain Current (Id): -11A
• Drain-Source Resistance (Rds On): 0.5Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 44 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 125W

IRF630 200V 9A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 9A
• Drain-Source Resistance (Rds On): 0.4Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 43 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 74W

IRF2807 75V 82A N-Channel HEXFET Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 75V
• Continuous Drain Current (Id): 82A
• Drain-Source Resistance (Rds On): 13mOhms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 160 nC
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 230W

2SK2225 1500V 2A N-Channel Power MOSFET (TO-3PFM Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 1500V
• Continuous Drain Current (Id): 2A
• Drain-Source Resistance (Rds On): 12Ohms
• Gate-Source Voltage (Vgs): 20V
• Operating Temperature Range: -55 to 150°C
• Power Dissipation (Pd): 50W