TRANSISTORS

2SC1623S NPN Transistors 50V (SOT-23 Package) Pack of 10

Specification

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) - 90 - 600
• Max Collector-Emitter Voltage (VCE): 6V
• Max Transition Frequency (fT): 250 MHz
• Collector-Emitter Voltage (VCEO) - 50V

S9012LT1 PNP SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 25V
4. Power dissipation: 300mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 120/350
8. Collector current:  500mA

KA431AZ Programmable shunt regulators transistors box of 2000pcs

Specification

1. Transistor type:  Programmable shunt regulator transistor
2. Programmable Output Voltage:  2.5V to 36V
3. Dynamic Output Impedance  :  0.2
4. Current Capability  :  1.0 to 100 mA
5. Low Output Noise Voltage
6. Fast Turn−on Response

5 mm infrared receiver black color 2 pins pack of 20pcs

Specification

1. Spectral range  :  700-1050
2. Light Current  :   ≥3mA
3. Breakdown Voltage  :  30
4. Maximum forward current   :  25mA
5. Power dissipation  :  100
6. Maximum reverse voltage  :  5V
7. Maximum Forward Voltage  :  1.2 V-1.3V
8. Package includes : 20 pieces

Si2309 60V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 60v
• Drian Current - 1250mA
• Static Drain–Source On Resistance - RDS(on)1=VGS= -10V ID=1250mA
• Fast Switching speed
• Case: SOT23

MPSH10S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

2SA812S PNP Transistors -50V (SOT-23 Package) Pack of 10

Specification

• Transistor Type  :  PNP transistor
• DC Current Gain (hFE) : 90 - 600
• Max Collector-Emitter Voltage (VCE) :  -6V
• Max Transition Frequency (fT) : 180MHz
• Collector-Emitter Voltage (VCEO): -50V

TIP31 Medium power NPN transistors box of 100pcs

Specification

1. Transistor type Medium power NPN transistor
2. Current gain  :  50
3. Maximum voltage across collector-emitter  :  100V
4. Maximum current allowed through collector  :  3A DC

Si2303 -30V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage -  -30v
• Drian Current -  -6mA
• Static Drain–Source On Resistance - RDS(on)1=VGS= -10V ID= -1.7mA
• Fast Switching speed
• Case: SOT23

BC857S PNP Transistors -45V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -45V
• Collector current:  -100mA
• Operating temperature range: -55°C to 175°C
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Transition Frequency (fT): 100 MHz

A1015 Audio frequency amplifier PNP transistors box of 2000pcs

Specification

1. Transistor type  :  Audio frequency amplifier PNP transistor
2. Power dissipation  :  0.4W
3. High voltage  :  50v
4. High current  :  150mA
5. Collector power dissipation  :  400mW
6. DC current gain  :  400

KSC2331 bipolar NPN low frequency transistors pack of 100pcs

Specification

1. Transistor type: bipolar NPN transistor
2. Collector-Emitter Voltage:  60V
3. Collector-Base Voltage  :  80V
4. Emitter-Base Voltage  :  8V
5. Collector Current  :  700 mA
6. DC Current Gain  :  40 to 240