MOSFET

Showing 1–12 of 8 results

  • IRF840 500V 8A N-channel Power Mosfet
    Rs. 55.00
    Specification:-

    1. N-Channel Power MOSFET
    2. Continuous drain current : 8A
    3. Gate threshold voltage : 10V (limit = ±20V)
    4. Drain to source breakdown voltage: 500V
    5. Drain source resistance : 0.85 Ohms
    6. Rise time and fall time : 23nS and 20nS

  • IRF520 100V 9.2A N-channel Power Mosfet
    Rs. 55.00
    Specifications

    1. Type: N-Channel
    2. Drain-Source Volt (Vds) : 100V
    3. Drain-Gate Volt (Vdg) : 100V
    4. Gate-Source Volt (Vgs) : 20V
    5. Drain Current (Id) : 10A
    6. Power Dissipation (Ptot): 70W

  • IRF540 100V 33A N-channel HEXFET Power Mosfet
    Rs. 55.00
    Specifications

    1. Type : Small signal N-Channel MOSFET
    2. Continuous drain current : 33A at 25°C
    3. Pulsed drain current : 110A
    4. Minimum gate threshold voltage : 2V
    5. The maximum gate threshold voltage : 4V
    6. Gate source voltage : ±20V
    7. Maximum drain-source voltage : 100V

  • IRF3205 55V 110A N-channel power mosfet
    Rs. 29.00

    Specification 

    1. Type                                   N channel
    2. Drain- source voltage          55V
    3. Gate-source voltage            ±20V
    4. Drain current                       110A
    5. Power Dissipation                200W
  • 2N7000 60V 200mA N-channel Power Mosfets pack of 20pcs
    Rs. 139.00
    Specifications

    1. Transistor polarity : N-channel
    2. Drain source voltage Vds : 60V
    3. Continuous drain current : 200mA
    4. Mounting : through hole
    5. Power dissipation : 400mW
    6. Resistance : 5 ohm (Ω)
    7. Package includes : 20 pieces

  • 2N7000 60V 200mA N-channel Power Mosfet pack of 2pcs
    Rs. 29.00
    Specifications

    1. Transistor polarity: N-channel
    2. Drain source voltage Vds: 60V
    3. Continuous drain current: 200mA
    4. Mounting: through hole
    5. Power dissipation: 400mW
    6. Resistance: 5 ohms (Ω)
    7. Package includes: 2 pieces

  • IRFI630A 200V 9A N-channel Power Mosfet
    Rs. 80.00
    Specifications

    1. Type : N - channel
    2. Drain-to-Source breakdown voltage : 200 V
    3. Gate-to-Source voltage, max : ±20 V
    4. Drain-source On-state resistance, max : 0.400 Ohm
    5. Continuous drain current : 9A
    6. Total gate charge : 43 nC
    7. Power dissipation : 74 W
  • IRFZ44N 55V 49A To-220 N-Channel Transistor Mosfet
    Rs. 39.00

    Specifications

    • Package Type: TO-220B (Through-Hole)
    • Drain-to-Source Breakdown Voltage : 55V
    • Continuous Drain Current :49A
    • Static Drain-to-Source On-Resistance : 17.5mΩ
    • Power Dissipation: 94W
    • Total Gate Charge: 63nC
    • Gate Threshold Voltage : 4V