MOSFET

IRF840 500V 8A N-channel Power Mosfet

Specification:-

1. N-Channel Power MOSFET
2. Continuous drain current : 8A
3. Gate threshold voltage : 10V (limit = ±20V)
4. Drain to source breakdown voltage: 500V
5. Drain source resistance : 0.85 Ohms
6. Rise time and fall time : 23nS and 20nS

IRF520 100V 9.2A N-channel Power Mosfet

Specifications

1. Type: N-Channel
2. Drain-Source Volt (Vds) : 100V
3. Drain-Gate Volt (Vdg) : 100V
4. Gate-Source Volt (Vgs) : 20V
5. Drain Current (Id) : 10A
6. Power Dissipation (Ptot): 70W

IRF540 100V 33A N-channel HEXFET Power Mosfet

Specifications

1. Type : Small signal N-Channel MOSFET
2. Continuous drain current : 33A at 25°C
3. Pulsed drain current : 110A
4. Minimum gate threshold voltage : 2V
5. The maximum gate threshold voltage : 4V
6. Gate source voltage : ±20V
7. Maximum drain-source voltage : 100V

2N7000 60V 200mA N-channel Power Mosfets pack of 20pcs

Specifications

1. Transistor polarity : N-channel
2. Drain source voltage Vds : 60V
3. Continuous drain current : 200mA
4. Mounting : through hole
5. Power dissipation : 400mW
6. Resistance : 5 ohm (Ω)
7. Package includes : 20 pieces

2N7000 60V 200mA N-channel Power Mosfet pack of 2pcs

Specifications

1. Transistor polarity : N-channel
2. Drain source voltage Vds : 60V
3. Continuous drain current : 200mA
4. Mounting : through hole
5. Power dissipation : 400mW
6. Resistance : 5 ohm (Ω)
7. Package includes : 2 pieces

IRF3205 55V 110A N-channel power mosfet

Specification 

1. Type                                   N channel
2. Drain- source voltage          55V
3. Gate-source voltage            ±20V
4. Drain current                       110A
5. Power Dissipation                200W

IRFI630A 200V 9A N-channel Power Mosfet

Specifications

1. Type : N - channel
2. Drain-to-Source breakdown voltage : 200 V
3. Gate-to-Source voltage, max : ±20 V
4. Drain-source On-state resistance, max : 0.400 Ohm
5. Continuous drain current : 9A
6. Total gate charge : 43 nC
7. Power dissipation : 74 W