2N2369 15V 200mA 625mW Through Hole NPN Bipolar Transistor TO-92

2N2369 15V 200mA 625mW Through Hole NPN Bipolar Transistor TO-92

The 2N2369 is a versatile NPN bipolar junction transistor (BJT), designed for general-purpose applications in switching and amplification. It is housed in a TO-92 through-hole package, making it suitable for easy mounting and integration in electronic circuits. The transistor operates with a maximum collector-emitter voltage of 15V and can handle up to 200mA of continuous collector current, making it ideal for low to medium power applications. With a power dissipation rating of 625mW, the 2N2369 is suitable for applications where moderate power handling is required without the need for heavy-duty components. Its high current gain (hFE) allows for efficient amplification, enabling the transistor to boost signal strength with minimal input power. Common applications for the 2N2369 include signal amplification, low-power switching, and oscillator circuits. It is often used in audio amplifiers, pulse generation, logic switching circuits, and other electronic designs that require fast switching times and reliable performance.

Feature:-

• NPN Bipolar Junction Transistor
• High Current Gain
• Suitable for fast switching applications
• Wide operating temperature range suitable for various environments.