BD137-16 60V 1.5A 1.25W Through Hole Bipolar Transistor NPN SOT-32-3 / TO-225AA / TO-126-3

BD137-16 60V 1.5A 1.25W Through Hole Bipolar Transistor NPN TO-126-3 

The BD137-16 is a 60V NPN bipolar junction transistor (BJT), designed for general-purpose switching and amplification in medium-power applications. Encapsulated in the TO-126-3 package, it provides a compact solution for use in circuits where space efficiency and reliable performance are essential. This transistor has a maximum collector-emitter voltage (Vce) of 60V and is capable of handling up to 1.5A of collector current (Ic), making it suitable for moderate current handling tasks. With a power dissipation rating of 1.25W, the BD137-16 can efficiently manage power in various electronic circuits, such as audio amplifiers, switching power supplies, and motor control circuits. The TO-126-3 package ensures easy mounting and good thermal management, allowing the transistor to operate within safe limits even under load. Ideal for signal amplification and switching applications, this transistor is widely used in consumer electronics, automotive circuits, and industrial systems that require stable performance at relatively low frequencies. The BD137-16 offers high current gain, ensuring efficient amplification of weak signals.

Features:-

• Reliable Performance
• High-Speed Operation
• Low Power Consumption
• High-Speed Operation