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SOT-23 FIELD EFFECT TRANSISTORS

DMG301NU-13 N-Channel 25 V 260mA Surface Mount Signal Field-Effect Transistor SOT-23-3

Specification:-

  • Package: SOT-23-3 / TO-236-3 / SC-59
  • Mounting Style: SMD/SMT
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Continuous Drain Current: 260 mA
  • Power Dissipation: 320 mW
  • Operating and Storage Temperature Range: -55 °C  to 150 °C 

Available in Pack Of:

SKU: UY8525A

MRP Rs. 750.00
Rs. 500.00 (Incl. Tax)
Rs. 423.73 (+18% GST extra)
Rs. 423.73 / pack of 1 = Rs. 423.73 per piece
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DMG301NU-13 N-Channel 25 V 260mA Surface Mount Signal Field-Effect Transistor SOT-23-3

The DMG301NU-13 is a highly efficient N-Channel Signal Field-Effect Transistor (FET) designed to deliver optimal performance in compact electronic applications. With a voltage rating of 25V and a current handling capacity of 260mA, this FET is well-suited for low-power switching and signal amplification tasks. Its advanced design ensures low gate drive requirements, making it energy-efficient and compatible with a wide range of control circuits. The transistor features a low on-resistance (R<sub>DS(on)</sub>), which minimizes power dissipation and heat generation, thereby enhancing system reliability. Its fast switching characteristics make it ideal for high-frequency applications, enabling rapid transitions with minimal losses. The DMG301NU-13 is housed in a space-saving SOT-23-3 package, ensuring ease of integration into densely populated PCBs while supporting automated assembly processes. This FET is suitable for use in battery-powered devices, DC-DC converters, load switching, and signal processing circuits. Its robust construction and reliability make it ideal for consumer electronics, telecommunications, and portable devices. With excellent thermal and electrical performance, the DMG301NU-13 ensures consistent operation in demanding environments, providing designers with a versatile and dependable solution for modern electronic designs.

Feature:-

  • Low Power Loss, High Efficiency 
  • Dual Diode Configuration
  • Low Forward Voltage Drop
  • Forward Current Capability
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