HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3

HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3

The HGT1S7N60A4DS Surface Mount IGBT Transistor is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in various power management and switching applications. This device provides efficient switching performance and robust handling of high-power loads with a voltage rating of 600V and a continuous current capacity of 34A. The IGBT is housed in a compact TO-263-3 surface-mount package, offering excellent thermal dissipation and ease of integration into modern PCB designs. With a power dissipation capacity of 125W, this IGBT transistor is ideal for demanding applications such as motor drives, inverters, power supplies, and industrial equipment. It combines the benefits of a high-voltage MOSFET with a low on-state voltage drop characteristic, minimizing power loss during operation and improving energy efficiency. Its fast switching speed further enhances system performance, making it suitable for high-frequency operations. The HGT1S7N60A4DS is built with rugged construction, ensuring reliability under challenging operating conditions. It also features low gate drive requirements, which simplify the design of driver circuits. This IGBT transistor is a dependable choice for engineers seeking a versatile and high-performance solution for power electronic systems. Its surface-mount design ensures a compact and efficient assembly process, aligning with modern manufacturing standards.

Features:-

• High Voltage Rating
• Compact Package
• Fast Switching
• Low Power Dissipation
• Low On-State Voltage Drop