
Integral Semiconductor
At Integral Semiconductor, we specialize in high-quality TO-126 transistors, designed for efficiency, reliability, and superior performance. Our transistors are engineered to meet the demanding needs of power amplification, switching, and voltage regulation in industrial, automotive, and electronic applications. With advanced manufacturing processes and strict quality control, we ensure exceptional thermal stability, low power loss, and long-lasting durability. At Integral Semiconductor, innovation drives our commitment to delivering cutting-edge semiconductor solutions. Whether for high-power circuits or precision electronics, our TO-126 transistors provide unmatched performance. Trust Integral Semiconductor for excellence in semiconductor technology.
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TO-126 TRANSISTORIntegral Semiconductor
Showing 1–12 of 3 results
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BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Collector-Base Voltage: 80V
- Collector-Emitter Voltage: 80V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Base Current: 7A
- Total Dissipation: 30W
- Storage Temperature: -65 to 150 C
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BD138-16 PNP 60V 1.5A 1.25W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Transistor Type: PNP
- Max Collector-Emitter Voltage: -60V
- Max Collector-Base Voltage: -60V
- Max Emitter-Base Voltage: -5V
- Max Collector Dissipation: 12.5 Watt
- Max Transition Frequency: 190 MHz
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BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Transistor Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 40 to 250
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C