Integral Semiconductor
Integral Semiconductor
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TO-126 TRANSISTOR
Integral Semiconductor
Showing 1–12 of 3 results
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![BD138-16 PNP 60V 1.5A 1.25W Through Hole Bipolar Transistor TO-126]()
BD138-16 PNP 60V 1.5A 1.25W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Transistor Type: PNP
- Max Collector-Emitter Voltage: -60V
- Max Collector-Base Voltage: -60V
- Max Emitter-Base Voltage: -5V
- Max Collector Dissipation: 12.5 Watt
- Max Transition Frequency: 190 MHz
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![BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126]()
BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Collector-Base Voltage: 80V
- Collector-Emitter Voltage: 80V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Base Current: 7A
- Total Dissipation: 30W
- Storage Temperature: -65 to 150 C
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![BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126]()
BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Transistor Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 40 to 250
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C