BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126
Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Collector-Base Voltage: 80V
- Collector-Emitter Voltage: 80V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Base Current: 7A
- Total Dissipation: 30W
- Storage Temperature: -65 to 150 C
SKU: DK8410A
BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126
The BD179 is a high-performance NPN bipolar junction transistor (BJT) designed for medium power applications. With a collector-emitter voltage rating of 80V and a maximum continuous collector current of 3A, it is well-suited for power amplification, switching, and audio applications. This transistor has a 3MHz transition frequency, allowing it to operate efficiently at high frequencies, making it suitable for use in RF and audio circuits. The BD179 is housed in the TO-126 package, a through-hole design that ensures easy mounting on a variety of circuit boards, offering high durability and reliability. With a power dissipation rating of 30W, this transistor can handle moderate power levels without overheating, making it ideal for use in power amplifiers, linear amplifiers, and motor control circuits. Its robust performance and thermal stability ensure reliable operation in demanding applications, including consumer electronics, automotive, and industrial systems.
Applications:-
- Power amplifiers and audio amplifiers.
- Switching circuits.
- RF circuits and communication equipment.
- Motor control and driver circuits.
