ALL ELECTRONICS COMPONENTS

S9015LT1 PNP SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 45V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 200/1000
8. Collector current:  100mA

SMB(G), GS3M 1000V Surface Mount General Purpose Rectifiers Diode pack of 5pcs

Specification

1. Case : SMB(G)
2. Maximum respective peak reverse voltage : 1000v
3. Maximum average rectified current : 3.0A
4. Maxim reverse current : 5.0µA
5. Non-Repetitive Peak Forward Surge Current : 100A
6. Maxim forward voltage : 1.1V

MBS, MB6S 0.5A 600V Bridge Rectifiers Diode pack of 5pcs

Specification

1. Case : MBS
2. Maximum respective peak reverse voltage : 600v
3. Maximum average rectified current : 0.5A
4. Maxim reverse current : 5.0µA
5. Non-Repetitive Peak Forward Surge Current : 35A
6. Maxim forward voltage : 1.0V

MC33153P Single IGBT Gate Driver IC (DIP-8 Package)

Specification:-

• Power Supply Voltage: 20 V
• Logic Input: VEE −0.3 to VCC V
• Current Sense Input: −0.3 to VCC V
• Blanking/Desaturation Input: −0.3 to VCC V
• Maximum Power Dissipation = 50°C: 0.56W
• Operating Junction Temperature: 150 °C
• Operating Ambient Temperature: -40 to 105 °C
• Storage Temperature Range: -65 to +150 °C

1N4750A 27V 1 watt Zener diodes box of 2500pcs

Specification

• Nominal Zener Voltage (VZ): 27V
• Power dissipation (PZ): 1300mW (practically 500mW)
• Zener regulator current (IZm): 750mA

1N4737A 7.5V 1 watt Zener diodes box of 2500pcs

Specification

• Nominal Zener Voltage (VZ): 7.5V
• Power dissipation (PZ): 1300mW (practically 500mW)
• Zener regulator current (IZm): 605mA

6.8K ohm 0805 High power SMD thick film chip resistor pack of 50pcs

Specifications

1. Case type : 0805
2. Resistance : 6.8K ohm
3. Tolerance :  ± 5%
4. Power rating : 1/8 watts
5. Element type : Thick film chip
6. Operating voltage range : 180V to 220V

C1674 Epitaxial NPN silicon transistors box of 2000pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

0.047μF 473J 100V CBB18 Polypropylene Film Capacitor Pack of 5pcs

Specification:-

• Rated voltage : 100V
• Dimensions = 17.0mm(W)
• Dimensions = 13.0mm(H)
• Dimensions = 8.0mm(T)
• Dimensions = 9.5mm(P)
• Dimensions = 0.6(d)
• Standard  =  GB10188 (IEC384-13) 
• Climatic Category = 40/085/21
• Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)

0.047μF 473J 400VAC CBB62 Metallized Polypropylene Film Capacitor Pack of 5pcs

Specification:-

• Rated voltage : 400 VAC
• Dimensions = 19.0mm(W)
• Dimensions = 15.0mm(H)
• Dimensions = 9.0mm(T)
• Dimensions = 15.0mm(P)
• Dimensions = 0.6(d)
• Reference Standard  =  GB/T 14472-98 (IEC 384-14)
• Climatic Category = 40/085/21
• Dissipation Factor = ≤ 0.001 (1kHz, 20°C)

DO-41, R1800F 1800V High Voltage Rectifiers Diode pack of 5pcs

Specification

1. Maximum respective peak reverse voltage : 1800v
2. Maximum average rectified current : 0.5A
3. Maxim reverse current : 5.0µA
4. Case :  DO-41
5. Non-Repetitive Peak Forward Surge Current : 30A
6. Maxim forward voltage : 2.5V
7. Maximum reverse recovery time : 500ns

BC338 800mA 25V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO): 25V
2. Continuous Collector Current (IC): 800mA
3. Transition Frequency (fT): 250MHz
4. DC Current Gain (hFE): 120-630
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor