ALL ELECTRONICS COMPONENTS

C1674 Epitaxial NPN silicon transistors box of 2000pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

C2482 High voltage NPN transistors box of 2000pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  300V
3. Collector-Base Voltage  :  300V
4. Emitter-Base Voltage  :  7V
5. Collector Current  :  0.1A
6. Collector Dissipation  :  - 0.9W
7. DC Current Gain  :  - 30 to 150

0.10μF 104J 63V CL21X Metallized Polyester Film Capacitor Pack of 5pcs

Specification:-

1. Rated voltage : 63V
2. Dimensions = 7.3mm(W)
3. Dimensions = 9.5mm(H)
4. Dimensions = 4.5mm(T)
5. Dimensions = 8.0-10.0mm(P)
6. Standard  =  GB/T 7332(IEC 384-2)
7. Capacitance Tolerance = ±5%(J), ±10%(K)
8. Insulation Resistance = ≥ 18000M Ω 

2SC2712 150mA 50V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 150mW
5. Case: SOT23
6. Frequency: 80MHz
7. Gain H(fe): 70/700
8. Collector current:  150mA

S9015LT1 PNP SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 45V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 200/1000
8. Collector current:  100mA

0.047μF 473K 100V CL21X Metallized Polyester Film Capacitor Pack of 5pcs

Specification:-

1. Rated voltage : 100V
2. Dimensions = 7.3mm(W)
3. Dimensions = 7.5mm(H)
4. Dimensions = 4.5mm(T)
5. Dimensions = 5.0mm(P)
6. Standard  =  GB/T 7332(IEC 384-2)
7. Capacitance Tolerance = ±5%(J), ±10%(K)
8. Insulation Resistance = ≥ 18000M Ω 

BC817 500mA 45V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 45V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 100MHz
7. Gain H(fe): 100/630
8. Collector current:  500mA

C2383 Epitaxial NPN silicon's transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

KBU, KBU6K 6A 800V Bridge Rectifiers Diode pack of 2pcs

Specification

1. Case : KBU
2. Maximum respective peak reverse voltage : 800v
3. Maximum average rectified current : 6.0A
4. Maxim reverse current : 10.0µA
5. Non-Repetitive Peak Forward Surge Current : 250A
6. Maxim forward voltage : 1.1V

2200uf 35V Aluminum Electrolytic Capacitors (16 X 31.5 mm) Pack of 5pcs

Specification

• Rating Voltage = 35V
• Material = Aluminum
• Capacitor Size = 16 x 31.5 mm
• Impedance (O)max. 20°C 1000KHz = 27
• Ripple current = 2000
• DC Leakage Current = ≤ 0.01CV (µF) at 20°C
• Capacitance Tolerance = ±20%(M)
• Shelf Life = After storage for 1000Hrs at +105°C with no voltage applied, the capacitor shell meet the specified limits for “Load Life”.

SMB, SS32 20V Surface Mount Schottky Barrier Rectifiers Diode Pack of 100

Specification

1. Case : SMB
2. Maximum respective peak reverse voltage : 20v
3. Maximum average rectified current : 3.0A
4. Maxim reverse current : 0.5µA
5. Non-Repetitive Peak Forward Surge Current : 100A
6. Maxim forward voltage : 0.45V

330uf 100V Aluminum Electrolytic Capacitors (16 X 25 mm) Pack of 5pcs

Specification

• Rating Voltage = 100V
• Material = Aluminum
• Capacitor Size = 16 x 25 mm
• Impedance (O)max. 20°C 1000KHz = 73
• Ripple current = 900
• DC Leakage Current = ≤ 0.01CV (µF) at 20°C
• Capacitance Tolerance = ±20%(M)
• Shelf Life = After storage for 1000Hrs at +105°C with no voltage applied, the capacitor shell meet the specified limits for “Load Life”.