ALL ELECTRONICS COMPONENTS
Showing 1–12 of 6986 results
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SA18A 1.0µA ,DO-15 Transient Voltage Suppressors Pack of 100
Rs. 429.00Specification:-
- Breakover voltage : Min(V) 20.0 , Max(V) 22.1
- Maximum peak current : 17.2A
- Maximum reverse leakage current @ VRWM : 1.0µA
- Power dissipation :500W
- Package : DO-15
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1.5KE75 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100
Rs. 659.00Specification:
- Minimum Breakdown voltage: 67.5V
- Maximum Breakdown voltage: 82.5V
- Maximum Reverse Leakage Current: 5.0µa
- Maximum peak pulse current: 13.9A
- Maximum clamping voltage: 108.0V
- Maximum Temperature Coefficient of VBR: 0.105%
- Power Dissipation: 1500W
- Package: DO-201AD
- Minimum Breakdown voltage: 67.5V
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GBJ6, GBJ3502 35A 200V Bridge Rectifiers Diode pack of 2pcs
Rs. 149.00Specification
- Case : GBJ6
- Maximum respective peak reverse voltage : 200v
- Maximum average rectified current : 35.0A
- Maxim reverse current : 10.0µA
- Non-Repetitive Peak Forward Surge Current : 350A
- Maxim forward voltage : 1.1V
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MM3Z5262B 300mW ,SOD-323 Packaging Diodes Pack of 5pcs
Rs. 39.00Specification:
- Power Dissipation : 300mW
- Nominal Zener Voltage : 51V
- Minimum Zener voltage : 48.45V
- Maximum Zener voltage : 53.55V
- Maximum Reverse Current : 0.1µa
- Package : SOD-323
- Power Dissipation : 300mW
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ADSP-2183KST-133 DSP Controller SMD IC 16-BIT TQFP128 / LQFP128
Rs. 500.00Specification:-
- Package: TQFP128 / LQFP128 (14x20)
- No. of Pins: 128 Pins
- Type: Fixed Point
- Clock Rate: 33.3MHz
- Supply Voltage-Max: 3.6 V
- Supply Voltage-Min: 3 V
- Supply Voltage-Nom: 3.3 V
- Mounting Type: Surface Mount
- Non-Volatile Memory: External
- Operating Temperature: 0°C ~ 70°C
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CA3140EZ BiMOS Operational Amplifier 8 pin IC pack of 2
Rs. 199.00Specification:-
- Model: CA3140EZ
- Number of pins: 8
- Type: Operational amplifier
- Input Current: 40pA
- Gain bandwidth: 4.5 MHz
- Input capacitance: 4 pF
- Output resistance: 60Ohm
- Operating and Storage Temperature Range: -55°C TO 125°C
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1.5KE200 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100
Rs. 659.00Specification:
- Minimum Breakdown voltage: 180.0V
- Maximum Breakdown voltage: 220.0V
- Maximum Reverse Leakage Current: 5.0µa
- Maximum peak pulse current: 5.2A
- Maximum clamping voltage: 287.0V
- Maximum Temperature Coefficient of VBR: 0.108%
- Power Dissipation: 1500W
- Package: DO-201AD
- Minimum Breakdown voltage: 180.0V
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0.027μF 273J 250V CBB18 Polypropylene Film Capacitor Pack of 5pcs
Rs. 39.00Specification:-
- Rated voltage : 250V
- Dimensions = 19.0mm(W)
- Dimensions = 16.0mm(H)
- Dimensions = 10.0mm(T)
- Dimensions = 12.5mm(P)
- Dimensions = 0.6(d)
- Standard = GB10188 (IEC384-13)
- Climatic Category = 40/085/21
- Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)
- Rated voltage : 250V
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GNJ6, GBJ1502 15A 200V Bridge Rectifiers Diode pack of 2pcs
Rs. 99.00Specification
- Case : GNJ6
- Maximum respective peak reverse voltage : 200v
- Maximum average rectified current : 15.0A
- Maxim reverse current : 10.0µA
- Non-Repetitive Peak Forward Surge Current : 200A
- Maxim forward voltage : 1.1V
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GBJ2, GBJ208 2A 800V Bridge Rectifiers Diode pack of 2pcs
Rs. 49.00Specification
- Case : RS-2
- Maximum respective peak reverse voltage : 800v
- Maximum average rectified current : 2.0A
- Maxim reverse current : 5.0µA
- Non-Repetitive Peak Forward Surge Current : 65A
- Maxim forward voltage : 1.1V
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MCP4802 8 Bit Dual Voltage Digital to Analog Converter (DAC) with SPI Interface IC (DIP-8 Package)
Rs. 229.00Specification:-
- Supply Voltage: 2.7V to 5.5V
- Current at Input Pins: ±2 m A
- Current at Supply Pins: ±50 m A
- Current at Output Pins: ±25 m A
- All Inputs and Outputs w.r.t. VSS: VSS –0.3V to VDD+0.3V
- Storage Temperature: -65°C to +150°C
- Ambient temperature with power applied: –55°C to +125°C
- Soldering temperature of leads (10 seconds): +300°C
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IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S