IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S
SKU: NG8542A
IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
The IRF440 is a 500V, 8.8A N-Channel Power MOSFET housed in a TO-247 package. This MOSFET is designed for medium-voltage applications requiring high current handling capabilities. With a 500V drain-to-source voltage rating, the IRF440 is suitable for power-switching applications that involve higher voltage levels, such as motor control, power supplies, inductive load switching, and DC-DC converters. One of the standout features of the IRF440 is its low on-resistance, which minimizes conduction losses during operation. This translates to more efficient power conversion, reducing heat generation, and improving overall system performance. With the ability to handle up to 8.8A of continuous drain current, the IRF440 offers solid current-carrying capacity for demanding applications. The TO-247 package of the IRF440 provides effective heat dissipation, making it ideal for use in power supplies and motor control circuits where high current and voltage levels can cause significant thermal stress. The package design is built to withstand higher power levels, ensuring reliable and efficient operation even under heavy-duty conditions.
Features:-
- Dynamic dV/dt rating
- Simple Drive Requirements
- Fast switching
- Ease of paralleling
