ALL ELECTRONICS COMPONENTS

1.5KE51A 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100

Specification:

1. Minimum Breakdown voltage: 48.5V
2. Maximum Breakdown voltage: 53.6V
3. Maximum Reverse Leakage Current: 5.0µa
4. Maximum peak pulse current: 21.4A
5. Maximum clamping voltage: 70.1V
6. Maximum Temperature Coefficient of VBR: 0.102%
7. Power Dissipation: 1500W
8. Package: DO-201AD

P4KE24A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 22.8 , Max(V) 25.2
• Maximum peak current : 13A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Package : DO-41

DO-201AD, FR301G 50V Glass Passivated Fast Recovery Rectifiers Diode pack of 5pcs

Specification

1. Case : DO-201AD
2. Maximum respective peak reverse voltage : 50v
3. Maximum average rectified current : 3.0A
4. Maxim reverse current : 5.0µA
5. Non-Repetitive Peak Forward Surge Current : 200A
6. Maxim forward voltage : 1.3V
7. Maximum reverse recovery time : 150ns

SMC(G) SMCJ11A 1500W Surface Mount Transient Voltage Suppressors Pack of 5pcs

Specification

1. Case : SMC(G)
2. Stand-off voltage : 11.0V
3. Maximum peak pulse current : 82.4A
4. Maxim reverse current : 5.0µA
5. Maximum clamping voltage : 18.2V
6. Power dissipation : 1500W

WOB, RB156 1.5A 800V Bridge Rectifiers Diode pack of 5pcs

Specification

1. Case : WOB
2. Maximum respective peak reverse voltage : 800v
3. Maximum average rectified current : 1.5A
4. Maxim reverse current : 5.0µA
5. Non-Repetitive Peak Forward Surge Current : 50A
6. Maxim forward voltage : 1.0V

38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 300V
• Continuous Drain Current (Id): 38.4A
• Drain-Source Resistance (Rds On): 85mOhms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 120 nC
• Operating Temperature Range: -55 – 175°C
• Power Dissipation (Pd): 290W

1.5KE150A 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 143.0V
• Maximum Breakdown voltage: 158.0V
• Maximum Reverse Leakage Current: 5.0µa
• Maximum peak pulse current: 7.2A
• Maximum clamping voltage: 207.0V
• Maximum Temperature Coefficient of VBR: 0.108%
• Power Dissipation: 1500W
• Package: DO-201AD

1.5KE56A 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 53.2V
• Maximum Breakdown voltage: 58.8V
• Maximum Reverse Leakage Current: 5.0µa
• Maximum peak pulse current: 19.5A
• Maximum clamping voltage: 77.0V
• Maximum Temperature Coefficient of VBR: 0.103%
• Power Dissipation: 1500W
• Package: DO-201AD

IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Drain-Source Breakdown Voltage min : 500V
• Temperature Coefficient type : 0.78V/°C
• Gate-Source Threshold Voltage min : 2.0V
• Gate-Source Threshold Voltage max : 4.0V
• Gate-Source Leakage max : +100nA
• Drain-Source On-State Resistance : 0.85Ω
• Forward Transconductance min : 5.3S

5KP70A 10µA ,R-6 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 77.8V
• Maximum Breakdown voltage: 86.0V
• Maximum Reverse Leakage Current: 10µa
• Maximum peak pulse current: 44A
• Maximum clamping voltage: 113V
• Power Dissipation: 5000W
• Package: R-6

5KP43A 10µA ,R-6 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 47.8V
• Maximum Breakdown voltage: 52.8V
• Maximum Reverse Leakage Current: 10µa
• Maximum peak pulse current: 72A
• Maximum clamping voltage: 69.4V
• Power Dissipation: 5000W
• Package: R-6

P4KE75A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 71.3 , Max(V) 78.8
• Maximum peak current : 4.1A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41