ALL ELECTRONICS COMPONENTS

IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 200V
• Continuous Drain Current (Id): 18A
• Drain-Source Resistance (Rds On): 0.15 Ohms
• Gate-Source Voltage (Vgs): 20V
• Gate Charge (Qg): 70 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 150W

LMC660 CMOS Quad Operational Amplifier SMD IC

Specification:-

• Slew Rate: 1.1 V/μs
• Specified for 2 kΩ and 600Ω Loads
• High Voltage Gain: 126 dB
• Low Input Offset Voltage: 3 mV
• Ultra Low Input Bias Current: 2 fA
• Low Distortion: 0.01% at 10 kHz
• Operating Range from +5V to +15.5V Supply

5KP16A 10µA ,R-6 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 17.8V
• Maximum Breakdown voltage: 19.7V
• Maximum Reverse Leakage Current: 10µa
• Maximum peak pulse current: 192A
• Maximum clamping voltage: 26.0V
• Power Dissipation: 5000W
• Package: R-6

SA14 1.0µA ,DO-15 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 15.6 , Max(V) 19.1
• Maximum peak current : 19.4A
• Maximum reverse leakage current @ VRWM : 1.0µA
• Power dissipation :500W
• Package : DO-15

P4KE400 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 360.0 , Max(V) 440.0
• Maximum peak current : 0.70A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41

P4KE82A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 77.9 , Max(V) 86.1
• Maximum peak current : 3.7A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41

P6KE13A 5.0µA ,DO-15 Transient Voltage Suppressors Pack of 100

Specification:

• Minimum Breakdown voltage: 12.4V
• Maximum Breakdown voltage: 13.7V
• Maximum Reverse Leakage Current: 5.0µa
• Maximum peak pulse current: 33A
• Maximum clamping voltage: 18.2V
• Maximum Temperature Coefficient of VBR: 0.081%
• Power Dissipation: 600W
• Package - DO-15

BZT52C13 500mW ,SOD-123 Packaging Diodes Pack of 5pcs

Specification:

• Power Dissipation : 500mW
• Nominal Zener Voltage : 13V
• Minimum Zener voltage : 12.4V
• Maximum Zener voltage : 14.1V
• Maximum Reverse Leakage Current : 0.1µa
• Package : SOD-123

SMA, SMAJ18A, 18.0V Surface Mount Transient Voltage Suppressors Rectifiers Diode pack of 5pcs

Specification

1. Case : SMA
2. Maximum respective peak reverse voltage : 18.0v
3. Maximum average rectified current : 10.3A
4. Maxim reverse current : 5.0µA
5. Maxim forward voltage : 29.2V

TDA0161DP Proximity Detector IC for Metal Detection

Specification:-

• Supply Voltage: 35V
• Frequency: 10MHz
• Supply Voltage +4 to +35V
• Operating Temperature Range: 150°C
• Storage temperature range: −55 to +150 °C

1.5KE11 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100

Specification:

1. Minimum Breakdown voltage: 9.90V
2. Maximum Breakdown voltage: 12.1V
3. Maximum Reverse Leakage Current: 5.0µa
4. Maximum peak pulse current: 93.0A
5. Maximum clamping voltage: 16.2V
6. Maximum Temperature Coefficient of VBR: 0.075%
7. Power Dissipation: 1500W
8. Package: DO-201AD

P6KE33A 5.0µA, DO-15 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 31.4V
• Maximum Breakdown voltage: 34.7V
• Maximum Reverse Leakage Current: 5.0µa
• Maximum peak pulse current: 13.2A
• Maximum clamping voltage: 45.7V
• Maximum Temperature Coefficient of VBR: 0.098%
• Power Dissipation: 600W
• Package: DO-15