IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 18A
- Drain-Source Resistance (Rds On): 0.15 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
SKU: OB7542A
IRF640 200V 18A N-Channel Power MOSFET (TO-220 Package)
The IRF640 is a 200V, 18A N-channel power MOSFET in a TO-220 package. This device is designed for a wide range of high-power switching applications, particularly where medium-voltage and high-current handling are required. The 200V drain-to-source voltage rating makes it suitable for use in circuits such as motor control, DC-DC converters, power supplies, and audio amplifiers. One of the key features of the IRF640 is its low on-resistance, which minimizes conduction losses and contributes to overall energy efficiency. With the ability to handle up to 18A of continuous drain current, the IRF640 is a robust choice for applications requiring high-current switching. Its TO-220 package allows for effective heat dissipation, making it capable of managing the heat generated during high-current operations, ensuring reliable performance even under heavy loads. This MOSFET is commonly used in motor drivers, power inverters, audio amplifiers, switching power supplies, and battery management systems, where both speed and efficiency are essential. Its fast switching capabilities also make it suitable for high-frequency applications.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
