ALL ELECTRONICS COMPONENTS
Showing 1–12 of 6986 results
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![BZT52C6V2 SMD 6.2 V Zener Diode SOD-123]()
BZT52C6V2 SMD 6.2 V Zener Diode SOD-123
Rs. 500.00Specification:-
- Package: SOD123
- No. of Pins: 2Pins
- Zener Voltage: 6.2 V
- Power Dissipation: 500 mW
- Voltage Tolerance: 5 %
- Mounting Style: SMD/SMT
- Operating Temperature: -65°C ~ 155°C
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![1nF 1206 50V SMD Capacitor Pack of 50]()
1nF 1206 50V SMD Capacitor Pack of 50
Rs. 79.00Specification:-
- Case type : 1206
- Capacitance : 1nF
- Tolerance : ± 5%
- Voltage range : 50V
- Mounting Type : SMD
- Operating Temperature Range (°C) : -55 °C to +125 °C
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![MAX1555 Lithium Ion/Polymer USB Battery Charger SMD IC (SOT-23 Package)]()
MAX1555 Lithium Ion/Polymer USB Battery Charger SMD IC (SOT-23 Package)
Rs. 209.00Specification:-
- 5-Pin Thin SOT23 Package
- Power Dissipation: 727mW
- Lead Temperature: +300°C
- Operating Temperature Range: -40°C to +85°C
- Junction Temperature Range: -40°C to +150°C
- Storage Temperature Range: -65°C to +150°C
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![5KP26A 10µA ,R-6 Transient Voltage Suppressor Pack of 100]()
5KP26A 10µA ,R-6 Transient Voltage Suppressor Pack of 100
Rs. 829.00Specification:
- Minimum Breakdown voltage: 28.9V
- Maximum Breakdown voltage: 31.9V
- Maximum Reverse Leakage Current: 10µa
- Maximum peak pulse current: 119A
- Maximum clamping voltage: 42.1V
- Power Dissipation: 5000W
- Package: R-6
- Minimum Breakdown voltage: 28.9V
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![13K ohm 1206 High Power SMD Thick Film Chip Resistor Pack of 50]()
13K ohm 1206 High Power SMD Thick Film Chip Resistor Pack of 50
Rs. 29.00Specification:-
- Case type: 1206
- Resistance: 10K ohm
- Tolerance: ± 5%
- Power rating: 1/8 watts
- Element type: Thick film chip
- Operating voltage range: 180V to 220V
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![4.7uF 0805 50V SMD Capacitor Pack of 50]()
4.7uF 0805 50V SMD Capacitor Pack of 50
Rs. 79.00Specification:-
- Case type : 0805
- Capacitance : 4.7uf
- Tolerance : ± 5%
- Voltage range : 50V
- Mounting Type : SMD
- Operating Temperature Range (°C) : -55 °C to +125 °C
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)]()
IRFP140N 100V 33A N-Channel Power MOSFET (TO-247 Package)
Rs. 179.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 0.052 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 94 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 140W
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![AM26LV32 Low-Voltage High-Speed Quadruple Differential Line Receiver SMD IC]()
AM26LV32 Low-Voltage High-Speed Quadruple Differential Line Receiver SMD IC
Rs. 169.00Specification:-
- Mounting: SMD
- Number of: 16 Pins
- Input Hysteresis: 50 mV Typical
- Operates From Single 3.3-V Supply
- Ultra-Low Power Dissipation: 27 mW Typical
- Switching Rates Up to 32 MHz
- 235 mW With Four Receivers at 32 MHz
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![AT24C01A-10PC EEPROM Memory IC 8-PDIP]()
AT24C01A-10PC EEPROM Memory IC 8-PDIP
Rs. 500.00Specification:-
- Package: PDIP-8 (0.300", 7.62mm)
- No. of Pins: 8-Pins
- Mounting Type: Through Hole
- Memory Size: 1 Kbit
- Access Time: 900 ns
- Maximum Clock Frequency: 0.4 MHz
- Supply Voltage Min: 4.5 V
- Supply Voltage Max: 5.5 V
- Operating Temperature: 0°C to 70°C
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![IR2101 High and Low Side Driver IC (DIP-8 Package)]()
IR2101 High and Low Side Driver IC (DIP-8 Package)
Rs. 209.00Specification:-
- High side floating supply voltage: -0.3 to 625 V
- High side floating supply offset voltage: VB -25 to VB +0.3 V
- High side floating output voltage: -0.3 to VB +0.3 V
- Low side and logic fixed supply voltage: -0.3 to 25V
- Low side output voltage: -0.3 to VCC+0.3 V
- Logic supply Voltage: -0.3 to VSS+0.3 V
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![IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1405 55V 169A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 169A
- Drain-Source Resistance (Rds On): 5.3mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 260 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
