ALL ELECTRONICS COMPONENTS
Showing 1–12 of 6986 results
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![IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF9610 200V 1.8A P-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 59.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 11 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 20W
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![11.0592Mhz Full-Size 2 Pin Crystal Oscillator HC49/U package Pack of 5]()
11.0592Mhz Full-Size 2 Pin Crystal Oscillator HC49/U package Pack of 5
Rs. 39.00Specifications :-
- Frequency Range: 11.0592Mhz
- Tolerance(%): 20
- Operating Temperature Range : -10C to +60C
- Storage condition (Deg C): -20 to 70
- Length (mm): 10
- Width (mm): 3.4
- Height (mm): 13
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![CNY17-2 Phototransistor Optocoupler IC DIP-6 Package]()
CNY17-2 Phototransistor Optocoupler IC DIP-6 Package
Rs. 29.00Specification:-
- IC Name: CNY17
- Package: DIP
- Size: 3.81X8.7X6.5mm
- Voltage Rating:70V Emitter, 0.4V Collector, 70V Collector-Emitter
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![74HC165 8-Bit Parallel In/Serial Out Shift Register SMD IC]()
74HC165 8-Bit Parallel In/Serial Out Shift Register SMD IC
Rs. 29.00Specification:-
- Mounting: SMD
- Power Dissipation: 500 mW
- Typical propagation delay: 20 ns
- Wide operating voltage range: 2–6V
- Supply Voltage: − 0.5 to + 7.0V
- DC Input Voltage: − 1.5 to VCC + 1.5V
- DC Output Voltage: − 0.5 to VCC + 0.5V
- Temperature Range − 65°C to + 150°C
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![HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3]()
HGT1S7N60A4DS Surface Mount 600V 34A 125W IGBT Transistor TO-263-3
Rs. 500.00Specification:-
- Package/Case: TO-263-3 (2 Leads + Tab) / D2PAK
- Type of transistor: IGBT
- Mounting: Surface Mount
- Collector-emitter voltage: 600V
- Collector current: 34A
- Power: 125W
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![330pF 1206 50V SMD Capacitor Pack of 50]()
330pF 1206 50V SMD Capacitor Pack of 50
Rs. 500.00Specification:-
- Case type : 1206
- Capacitance : 330pF
- Tolerance : ± 5%
- Voltage range : 50V
- Mounting Type : SMD
- Operating Temperature Range (°C) : -55 °C to +125 °C
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![0.033μF 1206 50V SMD Ceramic Capacitor Pack of 50]()
0.033μF 1206 50V SMD Ceramic Capacitor Pack of 50
Rs. 79.00Specification:-
- Case type: 1206
- Capacitance: 0.033uf
- Tolerance: ± 10%
- Voltage range: 50V
- Mounting Type: SMD
- Operating Temperature Range (°C): -55 °C to +125 °C
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![200K ohm 0603 High Power SMD Thick Film Chip Resistor Pack of 5000]()
200K ohm 0603 High Power SMD Thick Film Chip Resistor Pack of 5000
Rs. 449.00Specification:-
- Case type: 0603
- Resistance: 200K
- Tolerance: ± 5%
- Power Rating (Watt): 0.25W, 1/4W
- Operating Temperature: -55 °C to +155 °C
- Element type : Thick film chip
- Operating voltage range: 180V to 220V
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![2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)]()
2SK2717 900V 5A N-Channel Power MOSFET (TO-220F Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 5A
- Drain-Source Resistance (Rds On): 2.5Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
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![11.0592Mhz (SMD) Crystal Oscillator HC49/US Package Pack of 5]()
11.0592Mhz (SMD) Crystal Oscillator HC49/US Package Pack of 5
Rs. 39.00Specifications :-
- Frequency Range: 11.0592Mhz
- Tolerance(%): 30
- Operating Temperature Range: -10C to +60C
- Storage condition (Deg C): -20 to 70
- Length (mm): 11.4
- Width (mm): 4.7
- Height (mm): 3
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![2.2uF 50V SMD Electrolytic Capacitor Pack of 5]()
2.2uF 50V SMD Electrolytic Capacitor Pack of 5
Rs. 49.00Specification:-
- Type: SMD Electrolytic
- Capacitance: 2.2uF
- Rated Voltage: 50V
- Tolerance: ±10%
- Mounting Type: SMD
- Operating Temperature: -45℃~+105℃
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![FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)]()
FDA50N50 500V 48A N-Channel Power MOSFET (TO-3PN Package)
Rs. 499.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 625W
