TRANSISTORS

A966 Bipolar PNP transistor packs of 100pcs

Specifications

1. Transistor type:  bipolar PNP transistor
2. Collector-Emitter Voltage:  -30V
3. Collector-Base Voltage  :  -30V
4. Emitter-Base Voltage  :  -5V
5. Collector Current  :  -1.5A
6. Collector Dissipation  :   -0.9W
7. DC Current Gain  :  - 100 to 320
8. Transition Frequency  :  - 120MHz

BC807S PNP Transistors -45V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -45V
• Collector current:  -500mA
• Operating temperature range: -55°C to 175°C
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz

Si2306DS 30V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 30v
• Drian Current - 3500mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=10V ID=3500mA
• Fast Switching speed
• Case: SOT23

T1117-1.8 SOT 223 Voltage Regulator Pack of 5pcs

Specification :-

1. High-Efficiency Linear Regulators
2. Post Regulators for Switching Supplies
3. Built-in thermal shutdown
4. Output Voltage- 1.782 - 1.818

8050 Audio amplifier NPN transistors box of 2000pcs

Specifications

1. Transistor Type  :  NPN
2. Collector Current  :  0.7A or 700 mA
3. Max Collector-Emitter Voltage (V_CE)  :  20V
4. Max Collector-Base Voltage (V_CB)  :  30V
5. Max Emitter-Base Voltage (VBE)  :  5V
6. Max Collector Dissipation (Pc)  :  1 W
7. Max Transition Frequency  :  100 MHz

2SC3356 NPN SOT23-3L Bipolar Transistors Pack of 5pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 20 V
• Maximum Collector-Emitter Voltage |BVCEO|: 12 V
• Maximum Emitter-Base Voltage |BVEBO|: 3V
• Forward Current Transfer Ratio (hFE), MIN: 50
• Collector Dissipation: Pcw =200mW

MMBT3906LT1 PNP SOT-23 Bipolar Transistors Pack of 5

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 40V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 250MHz
7. Gain H(fe): 100/300
8. Collector current:  200mA

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

9015 Bipolar PNP transistor packs of 100pcs

Specification

1. Transistor Type  :  9015 Bipolar PNP transistor
2. Max Collector Current  :  -100mA
3. Max Collector-Emitter Voltage  :  -45V
4. Max Collector-Base Voltage  :  -50V
5. Max Emitter-Base Voltage  :  -5V
6. Max Collector Dissipation  :  400mW

2SC2735 NPN SOT23-3L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 30 V
• Maximum Collector-Emitter Voltage |BVCEO|: 20 V
• Maximum Emitter-Base Voltage |BVEBO|: 3V
• Forward Current Transfer Ratio (hFE), MIN: 40
• Collector Dissipation: Pcw = 150mW

BF422 Bipolar High voltages NPN transistors box of 2000pcs

Specification

1. Transistor type:  High voltage NPN transistor
2. Maximum Collector power dissipation:   0.83W
3. Maximum Collector-Base voltage  :  250V
4. Maximum Collector-Emitter voltage  :  250V
5. Maximum Emitter-Base voltage  :  5V
6. Maximum Collector current   :  0.05A
7. Transition frequency  :  60 MHz
8. Collector capacitance  :  1.6 pF

C2482 High voltage NPN transistors box of 2000pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  300V
3. Collector-Base Voltage  :  300V
4. Emitter-Base Voltage  :  7V
5. Collector Current  :  0.1A
6. Collector Dissipation  :  - 0.9W
7. DC Current Gain  :  - 30 to 150