TRANSISTORS
Showing 1–12 of 428 results
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![RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220]()
RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220
Rs. 500.00Specification:-
- Package: TO-220-3
- Transistor Type: 1 N-Channel
- Mounting Style: Through Hole
- Power Dissipation: 25W
- Continuous Drain Current: 2A
- Drain-Source Breakdown Voltage: 100V
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![MOC3082M Optoisolator Triac Output 4170Vrms 1 Channel 6-PDIP]()
MOC3082M Optoisolator Triac Output 4170Vrms 1 Channel 6-PDIP
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Mounting Type: Through Hole
- Output Type: Triac
- Voltage Isolation: 4170Vrms
- Voltage Off State: 800 V
- Static dV/dt (Min): 600V/µs
- Voltage Forward (Typ): 1.3V
- Current DC Forward (Max): 60 mA
- Operating Temperature: -40°C ~ 85°C
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![HCPL-0701#500 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC]()
HCPL-0701#500 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Number of Channels: 1 Channel
- Isolation Voltage: 3750 Vrms
- Forward Current: 1.6 mA
- Forward Voltage: 1.4 V
- Reverse Voltage: 5 V
- Output Current: 60 mA
- Power Dissipation: 135 mW
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![MMBT2369A 15V 200 mA 225 mW Surface Mount Bipolar Transistor NPN SOT-23-3]()
MMBT2369A 15V 200 mA 225 mW Surface Mount Bipolar Transistor NPN SOT-23-3
Rs. 500.00Specification:-
- Package/Case: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Transistor Polarity: NPN
- Collector- Emitter Voltage Max: 15 V
- Collector- Base Voltage: 40 V
- Emitter- Base Voltage : 4.5 V
- Collector-Emitter Saturation Voltage: 500 mV
- Pd - Power Dissipation: 225 mW
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![MCT5200 Optoisolator Transistor with Base Output 5300Vrms 1-Channel 6-PDIP]()
MCT5200 Optoisolator Transistor with Base Output 5300Vrms 1-Channel 6-PDIP
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Isolation Voltage: 5300 Vrms
- Forward Current: 50 mA
- Forward Voltage: 1.25 V
- Maximum Collector Emitter Voltage: 30 V
- Maximum Collector Current: 150 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
- Reverse Voltage: 6 V
- Power Dissipation: 260 mW
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![CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC]()
CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC
Rs. 500.00Specification:-
- Package: SOIC16 (0.154", 3.90mm)
- Transistor Polarity: NPN
- Maximum DC Collector Current: 20 mA
- Collector-Emitter Voltage Max: 15 V
- Collector- Base Voltage: 20 V
- Emitter- Base Voltage: 4 V
- Power Dissipation: 85 mW
- Gain Bandwidth Product fT: 1.15 GHz
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![6N136 Optoisolator Transistor with Base Output 2500Vrms 1-Channel 8-PDIP]()
6N136 Optoisolator Transistor with Base Output 2500Vrms 1-Channel 8-PDIP
Rs. 500.00Specification:-
- Package: PDIP8 (0.300", 7.62mm)
- Forward Current: 16 mA
- Forward Voltage: 1.33 V
- Rise Time: 5 ns
- Reverse Voltage: 5 V
- Output Current: 8 mA
- Power Dissipation: 100 mW
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![4N28 Optoisolator Transistor with Base Output 5000Vrms 1-Channel 6-PDIP]()
4N28 Optoisolator Transistor with Base Output 5000Vrms 1-Channel 6-PDIP
Rs. 500.00Specification:-
- No. of Channels: 1 Channel
- No. of Pins: 6Pins
- Isolation Voltage: 5kV
- Forward Current If Max: 60mA
- Collector Emitter Voltage V(br)ceo: 80V
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![BCV72 60V 500mA 350mW Surface Mount Bipolar Transistor NPN SOT-23-3 / TO-236-3 / SC-59]()
BCV72 60V 500mA 350mW Surface Mount Bipolar Transistor NPN SOT-23-3 / TO-236-3 / SC-59
Rs. 500.00Specification:-
- Package/Case: SOT-23-3 / TO-236-3 / SC-59
- Type of transistor: NPN
- Polarisation: bipolar
- Collector- Emitter Voltage Max: 60 V
- Collector- Base Voltage: 80 V
- Emitter- Base Voltage: 5 V
- Collector-Emitter Saturation Voltage: 250 mV
- Pd - Power Dissipation: 350 mW
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![F15031 150V 8A 30MHz 2W Through Hole PNP Bipolar Transistor TO-220FP / TO-220-3]()
F15031 150V 8A 30MHz 2W Through Hole PNP Bipolar Transistor TO-220FP / TO-220-3
Rs. 500.00Specification:-
- Package/Case: SOT-23-3 / TO-236-3 / SC-59
- Type of transistor: PNP
- Polarisation: Bipolar
- Maximum DC Collector Current: 8 A
- Collector- Emitter Voltage Max: 150 V
- Collector- Base Voltage: 150 V
- Emitter- Base Voltage: 5 V
- Collector-Emitter Saturation Voltage: 500 mV
- Pd - Power Dissipation: 2 W
- Gain Bandwidth Product fT: 30 MHz
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![MOC207R2M Optoisolator Transistor with Base Output 2500Vrms 1-Channel 8-SOIC (White Color)]()
MOC207R2M Optoisolator Transistor with Base Output 2500Vrms 1-Channel 8-SOIC (White Color)
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Forward Current: 60 mA
- Forward Voltage: 1.5 V
- Maximum Collector Emitter Voltage: 30 V
- Maximum Collector Current: 150 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
- Rise Time: 3.2 us
- Fall Time: 4.7 us
- Reverse Voltage: 6 V
- Power Dissipation: 240 mW
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![CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP]()
CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Reverse Voltage: 6 V
- Power Dissipation: 250 mW
- Forward Current: 60 mA
- Forward Voltage: 1.65 V
- Maximum Collector Emitter Voltage: 70 V
- Maximum Collector Current: 50 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV