F15031 150V 8A 30MHz 2W Through Hole PNP Bipolar Transistor TO-220FP / TO-220-3
Specification:-
- Package/Case: SOT-23-3 / TO-236-3 / SC-59
- Type of transistor: PNP
- Polarisation: Bipolar
- Maximum DC Collector Current: 8 A
- Collector- Emitter Voltage Max: 150 V
- Collector- Base Voltage: 150 V
- Emitter- Base Voltage: 5 V
- Collector-Emitter Saturation Voltage: 500 mV
- Pd - Power Dissipation: 2 W
- Gain Bandwidth Product fT: 30 MHz
SKU: DF8541A
F15031 150V 8A 30MHz 2W Through Hole PNP Bipolar Transistor TO-220FP / TO-220-3
The F15031 is a high-performance PNP bipolar junction transistor (BJT) designed for applications requiring robust switching and amplification. It is housed in a TO-220FP (fully insulated) package, which ensures electrical isolation and efficient heat dissipation, making it suitable for various high-power applications. With a maximum collector-emitter voltage (Vce) of 150V and a collector current (Ic) rating of 8A, this transistor is ideal for handling high voltages and currents. It offers a power dissipation capability of up to 2W, ensuring reliable operation in demanding environments. The transistor's high frequency response of 30MHz makes it suitable for fast-switching applications, such as motor drivers, power supplies, and audio amplifiers. The F15031's PNP configuration and low saturation voltage contribute to efficient performance in linear and switching applications. Its robust design is suitable for industrial, automotive, and consumer electronics, where high reliability and thermal stability are critical.
Features:-
- Reliable Performance
- High-Speed Operation
- Low Power Consumption
- High-Speed Operation
