RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220
Specification:-
- Package: TO-220-3
- Transistor Type: 1 N-Channel
- Mounting Style: Through Hole
- Power Dissipation: 25W
- Continuous Drain Current: 2A
- Drain-Source Breakdown Voltage: 100V
SKU: BI8518A
RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220
The RFP2N10L is an N-channel power MOSFET transistor designed for high-performance switching and amplification applications. It is capable of handling a maximum drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 2A, making it suitable for various power management tasks in both consumer and industrial electronics. With a maximum power dissipation rating of 25W, the RFP2N10L can operate efficiently in high-current circuits while maintaining safe thermal levels, particularly when paired with proper heat sinking and cooling mechanisms. Its low Rds(on) (on-state resistance) helps minimize conduction losses, improving overall system efficiency. The MOSFET's fast switching characteristics are well-suited for use in power supplies, motor drives, and other electronic systems that require quick response times.
Feature:-
- Low On-Resistance
- High Voltage Rating
- High Current Capability
