TO-126 TRANSISTOR

BF421 High voltage PNP transistor pack of 20pcs

Specification

1. Transistor type:  High voltage PNP transistor
2. Maximum Collector Power Dissipation:   0.83W
3. Maximum Collector-Base Voltage  :  300V
4. Maximum Collector-Emitter Voltage  :  300V
5. Maximum Emitter-Base Voltage  :  5V
6. Maximum Collector Current   :  0.025A
7. Transition Frequency  :  60 MHz
8. Collector Capacitance  :  1.6 pF

C2060 low power NPN transistors pack of 100pcs

Specification:-

1. Transistor type  :  NPN transistor
2. Collector-base breakdown voltage  :  40V
3. Collector-emitter breakdown voltage  :  32V
4. Emitter-base breakdown voltage  :  5V
5. DC current gain  :  400

BC548 General purpose NPN transistors box of 2000pcs

Specifications

1. Transistor type  :  NPN Transistor
2. DC Current Gain  :  800
3. Collector current  :  500mA
4. Emitter Base Voltage  :  5V
5. Base Current  :  5mA

BD139 Medium power NPN transistor packs of 100pcs

Specification:-

1. Transistor type  :  Medium power NPN transistor
2. Continuous collector current  :  1.5A
3. Collector-Emitter voltage  :  80 V
4. Collector-Base voltage  :  80V
5. Emitter Base Breakdown Voltage  :  5V
6. DC current gain  :  40 to 160

2N5401 Power switch PNP transistor packs of 100pcs

Specifications:-

1. Transistor type:  Power switch PNP transistor
2. DC Current Gain:  100
3. Maximum voltage across collector and emitter  :  150V
4. Maximum current allowed trough collector  :  600mA
5. Maximum voltage across collector and base  :  160 V
6. Maximum voltage across base and emitter  :  5V

KSC2331 bipolar NPN low frequency transistor pack of 20pcs

Specification:-

1. Transistor type  : bipolar NPN transistor
2. Collector-Emitter Voltage  :  60V
3. Collector-Base Voltage  :  80V
4. Emitter-Base Voltage  :  8V
5. Collector Current  :  700 mA
6. DC Current Gain  :  40 to 240

BD138-16 PNP 60V 1.5A 1.25W Through Hole Bipolar Transistor TO-126

Specification:-

• Package: SOT-32-3 / TO-225AA / TO-126-3
• Transistor Type: PNP
• Max Collector-Emitter Voltage: -60V
• Max Collector-Base Voltage: -60V
• Max Emitter-Base Voltage: -5V
• Max Collector Dissipation: 12.5 Watt
• Max Transition Frequency: 190 MHz

BF442 General purpose NPN transistor pack of 20pcs

Specification:-

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  250V
3. Collector-Base Voltage  :  250V
4. Emitter-Base Voltage  :  5V
5. Collector Current  :  0.05A
6. Collector Dissipation :  0.8W
7. DC Current Gain  :  50
8. Transition Frequency  :  60MHz

C2383 Epitaxial NPN silicon transistors pack of 100pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

BF494 Medium frequency NPN transistors box of 2000pcs

Specification:-

1. Transistor type  :  Medium frequency NPN transistor
2. Collector-Base Voltage  :  30V
3. Collector-Emitter Voltage  :  20V
4. Emitter-Base Voltage  :  5V
5. Continuous Collector Current  :  30mA

C1674 Epitaxial NPN silicon transistor packs of 100pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

MJE350 300V PNP Bipolar Power Transistor (TO-126 Package) Pack of 5

Specification:-

• Package Type: TO-126
• Transistor type: NPN
• Maximum collector current (IC): –5A
• Maximum collector-emitter voltage (VCE): –300V
• Maximum base collector voltage (VCB): –300V
• Maximum base-emitter voltage (VEBO): –5V
• Maximum collector dissipation (Pc): 20W