Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 42 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 45W
SKU: NU8542A
2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)
The 2SK3569 is a 600V, 10A N-Channel power MOSFET housed in a TO-220F package, designed for high-voltage and medium-current applications. This MOSFET features a robust drain-to-source voltage rating of 600V, making it ideal for use in circuits that require high voltage handling capabilities. The maximum continuous drain current of 10A ensures efficient operation in medium-load power applications. This MOSFET is optimized for switching applications, offering a low on-resistance, which reduces power loss and heat generation during operation. Its fast switching characteristics make it well-suited for applications like power supplies, motor control, and high-voltage converters. The TO-220F package provides excellent thermal dissipation with the added advantage of full electrical isolation, simplifying heat sink requirements. The 2SK3569 is widely used in applications such as inverters, lighting systems, uninterruptible power supplies (UPS), and other circuits demanding efficient switching performance. Its rugged design ensures reliability under varying conditions, including transient voltages and inductive loads.
Features:-
- Low drain-source ON resistance
- High forward transfer admittance
- Ease of paralleling
- Simple Drive Requirements
