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MOSFET

IRFI630A 200V 9A N-channel Power Mosfet

Specifications

  1. Type : N - channel
  2. Drain-to-Source breakdown voltage : 200 V
  3. Gate-to-Source voltage, max : ±20 V
  4. Drain-source On-state resistance, max : 0.400 Ohm
  5. Continuous drain current : 9A
  6. Total gate charge : 43 nC
  7. Power dissipation : 74 W
Available in Pack Of:

SKU: 1449FF

MRP Rs. 97.60
Rs. 80.00 (Incl. Tax)
Rs. 67.8 (+18% GST extra)
Rs. 67.8 / pack of 1 = Rs. 67.80 per piece
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IRFI630A 200V 9A N-channel Power Mosfet

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switching DC/DC converters, switch-mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

  1. Low gate charge ( typical 22 nC)
  2. Low Crss ( typical 22 pF)
  3. Fast switching
  4. 100% avalanche tested
  5. Improved dv/dt capability
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Based on 3 reviews
4.3
overall

very good product

Abhishek - Jul 15, 2024
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