MOSFET
IRFI630A 200V 9A N-channel Power Mosfet
Specifications
- Type : N - channel
- Drain-to-Source breakdown voltage : 200 V
- Gate-to-Source voltage, max : ±20 V
- Drain-source On-state resistance, max : 0.400 Ohm
- Continuous drain current : 9A
- Total gate charge : 43 nC
- Power dissipation : 74 W
Available in Pack Of:
SKU: 1449FF
MRP Rs. 97.60
Rs.
80.00
(Incl. Tax)
Rs.
67.8
(+18% GST extra)
Rs. 67.8 / pack of 1 = Rs. 67.80 per piece
Buy to Get ₹0 off!
₹0 Special Discount Applied
IRFI630A 200V 9A N-channel Power Mosfet
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switching DC/DC converters, switch-mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
- Low gate charge ( typical 22 nC)
- Low Crss ( typical 22 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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