FGA25N120 1200V High Voltage IGBT
Specification:-
- Collector-Emitter Voltage : 1200V
- Collector Cut-Off Current : 3mA
- Minimum Gate-Emitter threshold Voltage : 3.5V
- Maximum Gate-Emitter threshold Voltage : 7.5V
SKU: MJ8469A
FGA25N120 1200V High Voltage IGBT
1200V High Voltage Protected Door Bipolar Semiconductor (IGBT), a state of the art semiconductor gadget intended for high-power applications, empowering productive and exact control of electrical power in requesting conditions. Whether you're dealing with modern apparatus, sustainable power frameworks, or high-power hardware, our High Voltage IGBT is a definitive decision for accomplishing dependable and proficient execution. : With a voltage rating of 1200V, this IGBT can deal with high power levels, making it appropriate for applications requiring exact control and exchanging of high voltage electrical signs. The IGBT offers quick exchanging speeds, empowering exact command over electrical flows, decreasing exchanging misfortunes, and guaranteeing precise and effective execution. Created from top notch materials and intended for sturdiness, this IGBT can endure cruel working circumstances, making it ideal for modern applications that request unwavering quality and life span. The IGBT incorporates worked in security elements to shield against overcurrent and overtemperature conditions, guaranteeing the wellbeing of both the gadget and the general framework.
Features :-
- High Voltage Capacity
- Quick Exchanging Rate
- Overcurrent and Overtemperature Insurance
- Made from excellent material
Applications :-
- Engine drives
- Power inverter
- Enlistment warming
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Frequently Bought Together
@ ₹188/-