ALL ELECTRONICS COMPONENTS
Showing 1–12 of 6986 results
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P4KE18A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100
Rs. 429.00Specification:-
- Breakover voltage : Min(V) 17.1 , Max(V) 18.9
- Maximum peak current : 17A
- Maximum reverse leakage current @ VRRM : 5.0µA
- Package : DO-41
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0.015μF 153J 630V CBB18 Polypropylene Film Capacitor Pack of 5pcs
Rs. 39.00Specification:-
- Rated voltage : 630V
- Dimensions = 24.0mm(W)
- Dimensions = 16.0mm(H)
- Dimensions = 9.0mm(T)
- Dimensions = 18.0mm(P)
- Dimensions = 0.8(d)
- Standard = GB10188 (IEC384-13)
- Climatic Category = 40/085/21
- Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)
- Rated voltage : 630V
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1SS357 200mW ,SOD-323 Packaging Diodes Pack of 5pcs
Rs. 39.00Specification:
- Power Dissipation : 200mW
- Maximum repetitive peak reverse voltage : 40V
- Maximum average rectified current : 100
- Maximum reverse current : 5µa
- Package : SOD-323
- Power Dissipation : 200mW
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BZT52C6V8 500mW ,SOD-123 Packaging Diodes Pack of 5pcs
Rs. 39.00Specification:
- Power Dissipation : 500mW
- Nominal Zener Voltage : 6.8V
- Minimum Zener voltage : 6.4V
- Maximum Zener voltage : 7.2V
- Maximum Reverse Leakage Current : 2µa
- Package : SOD-123
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2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 42 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 45W
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5KP100 10µA ,R-6 Transient Voltage Suppressor Pack of 100
Rs. 829.00Specification:
- Minimum Breakdown voltage: 111V
- Maximum Breakdown voltage: 136.0V
- Maximum Reverse Leakage Current: 10µa
- Maximum peak pulse current: 28A
- Maximum clamping voltage: 179.0V
- Power Dissipation: 5000W
- Package: R-6
- Minimum Breakdown voltage: 111V
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0.0027μF 272K 100V CL21X Metallized Polyester Film Capacitor Pack of 5pcs
Rs. 39.00Specification:-
- Rated voltage : 100V
- Dimensions = 7.3mm(W)
- Dimensions = 7.5mm(H)
- Dimensions = 4.5mm(T)
- Dimensions = 5.0mm(P)
- Standard = GB/T 7332(IEC 384-2)
- Capacitance Tolerance = ±5%(J), ±10%(K)
- Insulation Resistance = ≥ 18000M Ω
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MM1Z5245B 500mW SOD-123 Packaging Diodes Pack of 5pcs
Rs. 39.00Specification:
- Power Dissipation : 500mW
- Nominal Zener Voltage : 15V
- Minimum Zener voltage : 14.35V
- Maximum Zener voltage : 15.75V
- Maximum Reverse Current : 0.1µa
- Package : SOD-123
- Power Dissipation : 500mW
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74HC393 Dual 4-bit Binary Ripple Counter SMD IC
Rs. 29.00Specification:-
- Mounting: SMD
- Power Dissipation: 500 mW
- Supply Voltage: − 0.5 to + 7.0V
- Supply Current: ± 50 mA
- DC Input Voltage: − 1.5 to VCC + 1.5V
- DC Output Voltage: − 0.5 to VCC + 0.5V
- Operating supply voltage range: 2–6V
- Operating Temperature: 65°C to 150°C
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IR2110 High and Low Side Driver SMD IC
Rs. 139.00Specification:-
- High-side floating supply voltage: -0.3 to 525 V
- High-side floating supply offset voltage: VB -25 to VB +0.3 V
- High-side floating output voltage: VS -0.3 to VB +0.3 V
- Low side and logic fixed supply voltage: -0.3 to 25 V
- Low side output voltage: -0.3 to VCC+0.3 V
- Logic supply voltage: -0.3 to VSS+25 V
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38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
Rs. 229.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W
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P6KE51A 5.0µA, DO-15 Transient Voltage Suppressor Pack of 100
Rs. 429.00Specification:
- Minimum Breakdown voltage: 48.5V
- Maximum Breakdown voltage: 53.6V
- Maximum Reverse Leakage Current: 5.0µa
- Maximum peak pulse current: 8.6A
- Maximum clamping voltage: 70.1V
- Maximum Temperature Coefficient of VBR: 0.102%
- Power Dissipation: 600W
- Package: DO-15
- Minimum Breakdown voltage: 48.5V