ALL ELECTRONICS COMPONENTS

0.056μF 563J 200V CBB18 Polypropylene Film Capacitor Pack of 5pcs

Specification:-

• Rated voltage : 200V
• Dimensions = 24.0mm(W)
• Dimensions = 18.0mm(H)
• Dimensions = 11.0mm(T)
• Dimensions = 18.0mm(P)
• Dimensions = 0.8(d)
• Standard  =  GB10188 (IEC384-13) 
• Climatic Category = 40/085/21
• Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)

SMC(G) SMCJ70A 1500W Surface Mount Transient Voltage Suppressors Pack of 5pcs

Specification

1. Case : SMC(G)
2. Stand-off voltage : 70.0V
3. Maximum peak pulse current : 13.3A
4. Maxim reverse current : 5.0µA
5. Maximum clamping voltage : 113V
6. Power dissipation : 1500W

BZT52C15S 200mW ,SOD-323 Packaging Diodes Pack of 5pcs

Specification:

• Power Dissipation : 200mW
• Nominal Zener Voltage : 15V
• Minimum Zener voltage : 13.8V
• Maximum Zener voltage : 15.6V
• Maximum Reverse Current : 0.1µa
• Package : SOD-323

MM1Z5B1 500mW ,SOD-123 Packaging Diodes Pack of 5pcs

Specification:

• Power Dissipation : 500mW
• Nominal Zener Voltage : 5.0V
• Minimum Zener voltage : 4.998V
• Maximum Zener voltage : 5.202V
• Maximum Reverse Current : 2.0µa
• Package : SOD-123

IR2110 High and Low Side Driver SMD IC

Specification:-

• High-side floating supply voltage: -0.3 to 525 V
• High-side floating supply offset voltage: VB -25 to VB +0.3 V
• High-side floating output voltage: VS -0.3 to VB +0.3 V
• Low side and logic fixed supply voltage: -0.3 to 25 V
• Low side output voltage: -0.3 to VCC+0.3 V
• Logic supply voltage: -0.3 to VSS+25 V

680uf / 16V Electrolytic Capacitors (8 X 12mm) Pack of 5

Specification:-

• Terminals: 2
• Material: Aluminum 
• Capacitor Size: 8 X 12mm
• Voltage Rating: 16V
• Capacitance: 680 uf
• Capacitance tolerance : ±20% (M)

SA150 1.0µA ,DO-15 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 167 , Max(V) 204.0
• Maximum peak current : 1.9
• Maximum reverse leakage current @ VRWM : 1.0µA
• Power dissipation :500W
• Package : DO-15

5KP9.0 20µA ,R-6 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 10.0V
• Maximum Breakdown voltage: 12.2V
• Maximum Reverse Leakage Current: 20µa
• Maximum peak pulse current: 295A
• Maximum clamping voltage: 16.9V
• Power Dissipation: 5000W
• Package: R-6

P4KE68 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 61.2 , Max(V) 74.8
• Maximum peak current : 4.3A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41

74HC00 Quad 2 Input NAND Gate SMD IC

Specification:-

• Mounting: SMD
• Number of: 14 Pins
• Voltage Rating: 4.75 to 5.25V
• Storage Temperature Range: 0°C to + 70°C
• Large Operating Voltage Range
• Four Independent NOR Gates
• High-Speed Low Power CMOS Type

2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)

Specification:-

• Number of Channels: 1 Channel
• Transistor Polarity: N-Channel
• Drain-Source Breakdown Voltage (Vds): 600V
• Continuous Drain Current (Id): 10A
• Drain-Source Resistance (Rds On): 0.54 Ohms
• Gate-Source Voltage (Vgs): 30V
• Gate Charge (Qg): 42 nC
• Operating Temperature Range: -55 – 150°C
• Power Dissipation (Pd): 45W

1.5KE8.2 200µA, DO-201AD Transient Voltage Suppressor Pack of 100

Specification:

1. Minimum Breakdown voltage: 7.38V
2. Maximum Breakdown voltage: 9.02V
3. Maximum Reverse Leakage Current: 200µa
4. Maximum peak pulse current: 120A
5. Maximum clamping voltage: 12.5V
6. Maximum Temperature Coefficient of VBR: 0.065%
7. Power Dissipation: 1500W
8. Package: DO-201AD