TRANSISTORS

BF442 General purpose NPN transistor pack of 20pcs

Specification:-

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  250V
3. Collector-Base Voltage  :  250V
4. Emitter-Base Voltage  :  5V
5. Collector Current  :  0.05A
6. Collector Dissipation :  0.8W
7. DC Current Gain  :  50
8. Transition Frequency  :  60MHz

BC846 100mA 65V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO):  65V
2. Continuous Collector Current (IC):  100mA
3. Transition Frequency (fT):  250MHz
4. DC Current Gain (hFE):  110-800
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor

KSC2331 bipolar NPN low frequency transistor pack of 20pcs

Specification:-

1. Transistor type  : bipolar NPN transistor
2. Collector-Emitter Voltage  :  60V
3. Collector-Base Voltage  :  80V
4. Emitter-Base Voltage  :  8V
5. Collector Current  :  700 mA
6. DC Current Gain  :  40 to 240

TT2140 1500V NPN Power Transistor (TO-220 Package) Pack of 5

Specification:-

• Package Type:TO-220
• Type: NPN Transistor 
• Max. Collector Current: 15A
• Max. Collector Power Dissipation (Pc): 30 W
• Max. Collector-Base Voltage (Vcb): 1500 V
• Max. Collector-Emitter Voltage (Vce): 800 V
• Max. Emitter-Base Voltage (Veb): 6 V
• Max. Collector Current (Ic max): 6 A
• Operating Temperature Range: -55°C to +150°C

BF494 Medium frequency NPN transistors box of 2000pcs

Specification:-

1. Transistor type  :  Medium frequency NPN transistor
2. Collector-Base Voltage  :  30V
3. Collector-Emitter Voltage  :  20V
4. Emitter-Base Voltage  :  5V
5. Continuous Collector Current  :  30mA

C2383 Epitaxial NPN silicon transistors pack of 100pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

C1674 Epitaxial NPN silicon transistor packs of 100pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

Si2302ds 20V SOT-23 N-Channel Mosfet Pack of 10pcs

Specification :-

• Drian Source Voltage - 20v
• Drian Current - ±8mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=4.5V ID=3.6AmA
• Fast Switching speed
• Case: SOT23

2N6107 PNP Transistors 70V (TO-220 Package) Pack of 100

• Transistor Polarity - PNP
• Collector-Emitter Voltage (VCEO) - 70V
• Continuous Base Current (IB) - 3A
• Continuous Collector Current (IC) - 7A
• Emitter cut-off current (IC) - 500mA
• DC Current Gain (hFE) - 2
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

BC328, -800mA, -25V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage:  -800 volts
4. Collector current:   25 mA
5. Gain H(fe):  100/630
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

BC559, -100mA, -65V TO-92 Package General purpose PNP transistor pack of 10 pcs

Specification

1. Type:   Transistor
2. Polarity:   PNP
3. Collector - Emitter voltage:  -65 volts
4. Collector current:   -100 mA
5. Gain H(fe):  110/800
6. Power dissipation:  625 mW
7. F(t) minimum:  50 MHz
8. Package: TO-92
9. Max Storage & Operating temperature Should Be: -55 to +150 Centigrade

S8050LT1 NPN SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: NPN
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 25V
4. Power dissipation: 300mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 120/350
8. Collector current:  500mA