TRANSISTORS

C1674 Epitaxial NPN silicon transistors box of 2000pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

C2060 low powered NPN transistors box of 2000pcs

Specification

1. Transistor type:  NPN transistor
2. Collector-base breakdown voltage:  40V
3. Collector-emitter breakdown voltage  :  32V
4. Emitter-base breakdown voltage  :  5V
5. DC current gain  :  400

2N2222 General purpose NPN transistors box of 2000pcs

Specifications

• Transistor Type  :  Bipolar high current NPN Transistor
• DC Current Gain  :  100
• Continuous Collector current  :  800mA
• Emitter Base Voltage  :  6V
• Collector Emitter Voltage  :  30V
• Base Current  :  5mA

MPSH11S NPN Transistors 25V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 60-300
• Max Collector-Emitter Voltage (VCE): 10V
• Max Transition Frequency (fT): 650 MHz
• Collector-Emitter Voltage (VCEO) : 25V

2SC2712 150mA 50V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 150mW
5. Case: SOT23
6. Frequency: 80MHz
7. Gain H(fe): 70/700
8. Collector current:  150mA

BC817S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) : 45V

2N3906 General Purpose PNP Transistor Pack of 5

Specifications:-

• Collector emitter voltage: -40V
• Collector base voltage: -40V
• Emitter base voltage: -5V
• Collector current: -200mA
• Collector dissipation: -625mW
• Transition frequency: 250MHz
• Noise Figure: – 4dB

C2383 Epitaxial NPN silicon's transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

2N5551 Amplifier NPN transistors box of 2000pcs

Specification

1. Transistor type  :  Amplifier NPN Transistor
2. High DC Current Gain  :  80
3. Continuous Collector current  :  600mA
4. Collector-Emitter voltage  :  160 V
5. Collector-Base voltage  :  180V
6. Emitter Base Voltage  :  6V
7. Transition Frequency  :  100MHz

FMW3 NPN SOT23-5L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 120 V
• Maximum Collector-Emitter Voltage |BVCEO|: 120 V
• Maximum Emitter-Base Voltage |BVEBO|: 50 V
• Forward Current Transfer Ratio (hFE), MIN: 120

FMMT4142 200mA 25V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 25V
4. Power dissipation: 330mW
5. Case: SOT23
6. Frequency: 300MHz
7. Gain H(fe): 120/360
8. Collector current:  200mA

BC338 800mA 25V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO): 25V
2. Continuous Collector Current (IC): 800mA
3. Transition Frequency (fT): 250MHz
4. DC Current Gain (hFE): 120-630
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor