TRANSISTORS

2N5551 Amplifier NPN transistors box of 2000pcs

Specification

1. Transistor type  :  Amplifier NPN Transistor
2. High DC Current Gain  :  80
3. Continuous Collector current  :  600mA
4. Collector-Emitter voltage  :  160 V
5. Collector-Base voltage  :  180V
6. Emitter Base Voltage  :  6V
7. Transition Frequency  :  100MHz

BF422 Bipolar High voltages NPN transistors box of 2000pcs

Specification

1. Transistor type:  High voltage NPN transistor
2. Maximum Collector power dissipation:   0.83W
3. Maximum Collector-Base voltage  :  250V
4. Maximum Collector-Emitter voltage  :  250V
5. Maximum Emitter-Base voltage  :  5V
6. Maximum Collector current   :  0.05A
7. Transition frequency  :  60 MHz
8. Collector capacitance  :  1.6 pF

2N5296 NPN Transistors 40V (TO-220 Package) Pack of 5

Specification:-

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 40V
• Continuous Base Current (IB) - 2A
• Continuous Collector Current (IC) - 1A
• Emitter cut-off current (IC) - 200mA
• DC Current Gain (hFE) - 30-120
• Operating Temperature Range - (-65 - 150°C)

2N2222 General purpose NPN transistors box of 2000pcs

Specifications

• Transistor Type  :  Bipolar high current NPN Transistor
• DC Current Gain  :  100
• Continuous Collector current  :  800mA
• Emitter Base Voltage  :  6V
• Collector Emitter Voltage  :  30V
• Base Current  :  5mA

FMW3 NPN SOT23-5L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 120 V
• Maximum Collector-Emitter Voltage |BVCEO|: 120 V
• Maximum Emitter-Base Voltage |BVEBO|: 50 V
• Forward Current Transfer Ratio (hFE), MIN: 120

2N6520S PNP Transistors -350V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage: -350V
• Collector current: -500mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 50-200
• Max Collector-Emitter Voltage (VCE):  -10V
• Max Transition Frequency (fT): 40MHz

BC817S NPN Transistors 45V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 100-600
• Max Transition Frequency (fT): 100 MHz
• Collector-Emitter Voltage (VCEO) : 45V

C2383 Epitaxial NPN silicon's transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

FMMT4142 200mA 25V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 25V
4. Power dissipation: 330mW
5. Case: SOT23
6. Frequency: 300MHz
7. Gain H(fe): 120/360
8. Collector current:  200mA

S9016LT1 NPN SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: NPN
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 20V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 300MHz
7. Gain H(fe): 70/200
8. Collector current:  25mA

M8050 1000mA 25V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 25V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 80/300
8. Collector current:  1000mA

2SC2223 NPN SOT23-3L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 30 V
• Maximum Collector-Emitter Voltage |BVCEO|: 20 V
• Maximum Emitter-Base Voltage |BVEBO|: 4V
• Forward Current Transfer Ratio (hFE), MIN: 40
• Collector Dissipation: Pcw =150mW