TRANSISTORS
Showing 1–12 of 428 results
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![BCW61D 80V 32V 100mA 100MHz 250mW Surface Mount PNP Bipolar Transistor SOT-23]()
BCW61D 80V 32V 100mA 100MHz 250mW Surface Mount PNP Bipolar Transistor SOT-23
Rs. 500.00Specification:-
- Package: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Transistor Polarity: PNP
- Maximum DC Collector Current: 100 mA
- Collector- Emitter Voltage VCEO Max: 32 V
- Collector- Base Voltage VCBO: 32 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 550 mV
- Pd - Power Dissipation: 250 mW
- Gain Bandwidth Product fT: 100 MHz
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![MMBT2369A 15V 200 mA 225 mW Surface Mount Bipolar Transistor NPN SOT-23-3]()
MMBT2369A 15V 200 mA 225 mW Surface Mount Bipolar Transistor NPN SOT-23-3
Rs. 500.00Specification:-
- Package/Case: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Transistor Polarity: NPN
- Collector- Emitter Voltage Max: 15 V
- Collector- Base Voltage: 40 V
- Emitter- Base Voltage : 4.5 V
- Collector-Emitter Saturation Voltage: 500 mV
- Pd - Power Dissipation: 225 mW
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![CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP]()
CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Reverse Voltage: 6 V
- Power Dissipation: 250 mW
- Forward Current: 60 mA
- Forward Voltage: 1.65 V
- Maximum Collector Emitter Voltage: 70 V
- Maximum Collector Current: 50 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
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![4N28 Optoisolator Transistor with Base Output 5000Vrms 1-Channel 6-PDIP]()
4N28 Optoisolator Transistor with Base Output 5000Vrms 1-Channel 6-PDIP
Rs. 500.00Specification:-
- No. of Channels: 1 Channel
- No. of Pins: 6Pins
- Isolation Voltage: 5kV
- Forward Current If Max: 60mA
- Collector Emitter Voltage V(br)ceo: 80V
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![CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC]()
CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC
Rs. 500.00Specification:-
- Package: SOIC16 (0.154", 3.90mm)
- Transistor Polarity: NPN
- Maximum DC Collector Current: 20 mA
- Collector-Emitter Voltage Max: 15 V
- Collector- Base Voltage: 20 V
- Emitter- Base Voltage: 4 V
- Power Dissipation: 85 mW
- Gain Bandwidth Product fT: 1.15 GHz
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![IRF830A N-Channel 500V 5A 74W Through Hole TO-220AB]()
IRF830A N-Channel 500V 5A 74W Through Hole TO-220AB
Rs. 500.00Specification:-
- Package: TO220-3
- Drain-Source Voltage: 500 V
- Gate-Source Voltage-Continuous ±30 V
- Drain Current-Continuous: 25°C = 5 A
- Drain Current-continuous: 100°C = 3.2A
- IDM Drain Current-Single Plused 20 A
- PD Total Dissipation @TC=25℃ 74 W
- Tj Max. Operating Junction Temperature 150 ℃
- Tstg Storage Temperature -55~150 ℃
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![MCT62SD Optoisolator Transistor Output 5000Vrms 2-Channel 8-SMD Gull Wing]()
MCT62SD Optoisolator Transistor Output 5000Vrms 2-Channel 8-SMD Gull Wing
Rs. 500.00Specification:-
- Package: SMD8 Gull Wing
- Forward Current: 60 mA
- Forward Voltage: 1.5 V
- Maximum Collector Emitter Voltage: 85 V
- Maximum Collector Current: 30 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
- Rise Time: 2.4 us
- Reverse Voltage: 25 V
- Power Dissipation: 400 mW
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![FDT439N N-Channel 30V 6.3A 3W Surface Mount Transistor SOT-223]()
FDT439N N-Channel 30V 6.3A 3W Surface Mount Transistor SOT-223
Rs. 500.00Specification:-
- Package: SOT-223-4 (3 Leads + Tab) / TO-261-4 / TO-261AA
- Transistor Type: 1 N-Channel
- Mounting Style: Surface Mount
- Number of Channels: 1 Channel
- Vds - Drain-Source Breakdown Voltage: 30 V
- Continuous Drain Current: 6.3 A
- Rds On - Drain-Source Resistance: 38 mOhms
- Gate-Source Threshold Voltage: 400 mV
- Gate Charge: 15 nC
