TRANSISTORS

Si2305 -8V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage -  -8V
• Drian Current -  -3.5mA
• Static Drain–Source On Resistance - RDS(on)1=VGS= -4.5V ID= -3.5mA
• Fast Switching speed
• Case: SOT23

13001 Epitaxial NPN transistors box of 2000pcs

Specification

1. Transistor type  :  Epitaxial NPN transistor
2. Collector Power Dissipation  :  0.8W
3. Collector-Base Voltage  :  600V
4. Collector-Emitter Voltage  :  400 V
5. Emitter-Base Voltage  :  9V
6. Collector Current  :  0.5A

2N3906 General Purpose PNP Transistor Pack of 5

Specifications:-

• Collector emitter voltage: -40V
• Collector base voltage: -40V
• Emitter base voltage: -5V
• Collector current: -200mA
• Collector dissipation: -625mW
• Transition frequency: 250MHz
• Noise Figure: – 4dB

2SC3356 NPN SOT23-3L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 20 V
• Maximum Collector-Emitter Voltage |BVCEO|: 12 V
• Maximum Emitter-Base Voltage |BVEBO|: 3V
• Forward Current Transfer Ratio (hFE), MIN: 50
• Collector Dissipation: Pcw =200mW

78L05 Voltage regulators transistors box of 2000pcs

Specification

1. Transistor type  :  78L05 Voltage regulator transistor
2. Output Current  :  100mA
3. Maximum Input Voltage  :  30V
4. Operating current  :  5mA

2N5401 Power switch PNP transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Power switch PNP transistor
2. DC Current Gain  :  100
3. Maximum voltage across collector and emitter  :  150V
4. Maximum current allowed trough collector  :  600mA
5. Maximum voltage across collector and base  :  160 V
6. Maximum voltage across base and emitter  :  5V

BF442 General purpose NPN transistor packs of 100pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  250V
3. Collector-Base Voltage  :  250V
4. Emitter-Base Voltage  :  5V
5. Collector Current  :  0.05A
6. Collector Dissipation :  0.8W
7. DC Current Gain  :  50
8. Transition Frequency  :  60MHz

C2330 Epitaxial NPN amplifiers transistors box of 2000pcs

Specifications

1. Transistor type  :  Epitaxial NPN transistor
2. Collector-Emitter Volt  :  400V
3. Collector-Base Volt  :  400V
4. Collector Current  :  0.1A
5. Power Dissipation  :  1000mW
6. Current-Gain-Bandwidth  :  50MHz

D965 Bipolar NPN transistors box of 2000pcs

Specifications

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  20V
3. Collector-Base Voltage  :  40V
4. Collector Current  :  5A
5. Collector Dissipation  :  0.75W
6. DC Current Gain  :  230 to 600
7. Transition Frequency  :  150MHz

BC338 800mA 25V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO): 25V
2. Continuous Collector Current (IC): 800mA
3. Transition Frequency (fT): 250MHz
4. DC Current Gain (hFE): 120-630
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor

A1015LT1 150mA 50V SOT-23 PNP Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: PNP
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 80MHz
7. Gain H(fe): 130/400
8. Collector current:  150mA

Si2312 20V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 20v
• Drian Current - 3770
• Static Drain–Source On Resistance - RDS(on)1=VGS=4.5V ID=5AmA
• Fast Switching speed
• Case: SOT23