TRANSISTORS

C2482 High voltage NPN transistors box of 2000pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  300V
3. Collector-Base Voltage  :  300V
4. Emitter-Base Voltage  :  7V
5. Collector Current  :  0.1A
6. Collector Dissipation  :  - 0.9W
7. DC Current Gain  :  - 30 to 150

S9015LT1 PNP SOT-23 Bipolar Transistors Pack of 5pcs

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 45V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 200/1000
8. Collector current:  100mA

M8050 1000mA 25V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 25V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 150MHz
7. Gain H(fe): 80/300
8. Collector current:  1000mA

2SD596 700mA 25V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 25V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 170MHz
7. Gain H(fe): 110/400
8. Collector current:  700mA

T1117-2.5 SOT 223 Voltage Regulator Pack of 100pcs

Specification :-

1. High-Efficiency Linear Regulators
2. Post Regulators for Switching Supplies
3. Built-in thermal shutdown
4. Output Voltage- 2.475 - 2.525

2SC1623 NPN SOT23-3L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 60 V
• Maximum Collector-Emitter Voltage |BVCEO|: 50 V
• Maximum Emitter-Base Voltage |BVEBO|: 5V
• Forward Current Transfer Ratio (hFE), MIN: 90
• Collector Dissipation: Pcw =200mW

BC338 800mA 25V TO-92 Package General purpose NPN transistor pack of 10 pcs

Specification

1. Collector-Emitter Voltage (VCEO): 25V
2. Continuous Collector Current (IC): 800mA
3. Transition Frequency (fT): 250MHz
4. DC Current Gain (hFE): 120-630
5. Operating Temperature Range: -55 - 150°C
6. Transistor type  :  NPN Transistor

TL431 100mA NPN Regulator SMD Transistors 37V (SOT-23 Package) Pack of 3000

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  37 V
• Transition Frequency, min: 100 MHz
• Power dissipation: 300 mW
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: SOT-23

C2383 Epitaxial NPN silicon's transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

C1674 Epitaxial NPN silicon transistors box of 2000pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

78L05 Voltage regulators transistors box of 2000pcs

Specification

1. Transistor type  :  78L05 Voltage regulator transistor
2. Output Current  :  100mA
3. Maximum Input Voltage  :  30V
4. Operating current  :  5mA

2SC2712 150mA 50V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 150mW
5. Case: SOT23
6. Frequency: 80MHz
7. Gain H(fe): 70/700
8. Collector current:  150mA