TRANSISTORS
Showing 1–12 of 426 results
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![BFR93A-E6327 NPN 12V 90mA 6GHz 300mW Surface Mount RF Transistor SOT-23]()
BFR93A-E6327 NPN 12V 90mA 6GHz 300mW Surface Mount RF Transistor SOT-23
Rs. 500.00Specification:-
- Package: SOT-23-3 / TO-236-3 / SC-59
- Mounting Style: SMD/SMT
- Transistor Polarity: NPN
- Maximum DC Collector Current: 90 mA
- Power Dissipation: 300 mW
- Collector- Emitter Voltage Max: 12V
- Emitter- Base Voltage: 2V
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![CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP]()
CNY17F-2 5000Vrms 1-Channel Optoisolator Transistor Output 6-PDIP
Rs. 500.00Specification:-
- Package: PDIP6 (0.300", 7.62mm)
- Reverse Voltage: 6 V
- Power Dissipation: 250 mW
- Forward Current: 60 mA
- Forward Voltage: 1.65 V
- Maximum Collector Emitter Voltage: 70 V
- Maximum Collector Current: 50 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
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![HP2731 3750Vrms 2 Channel Optoisolator Darlington Output 8-SMD Gull Wing]()
HP2731 3750Vrms 2 Channel Optoisolator Darlington Output 8-SMD Gull Wing
Rs. 500.00Specification:-
- Package: SMD8 Gull Wing
- Number of Channels: 1 Channel
- Isolation Voltage: 3750 Vrms
- Number of Channels: 2 Channel
- Output Current: 60 mA
- Input Power Dissipation: 35 mW
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![MOC3012M Optoisolator Triac Output 4170Vrms 1-Channel 6-SMD Gull Wing]()
MOC3012M Optoisolator Triac Output 4170Vrms 1-Channel 6-SMD Gull Wing
Rs. 500.00Specification:-
- Package: SMD6 Gull Wing
- Mounting Type: Through Hole
- Voltage Isolation: 4170Vrms
- Voltage Off State: 250 V
- Voltage Forward: 1.15V
- Current DC Forward (Max): 60 mA
- Operating Temperature: -40°C ~ 85°C
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![CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC]()
CA3127M Surface Mount RF Transistor 5 NPN 15V 20mA 1.15GHz 85mW 16-SOIC
Rs. 500.00Specification:-
- Package: SOIC16 (0.154", 3.90mm)
- Transistor Polarity: NPN
- Maximum DC Collector Current: 20 mA
- Collector-Emitter Voltage Max: 15 V
- Collector- Base Voltage: 20 V
- Emitter- Base Voltage: 4 V
- Power Dissipation: 85 mW
- Gain Bandwidth Product fT: 1.15 GHz
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![D45E1 40V 10A 50W Through Hole PNP Bipolar Transistor TO-220]()
D45E1 40V 10A 50W Through Hole PNP Bipolar Transistor TO-220
Rs. 500.00Specification:-
- Package: TO-220-3
- Transistor Type: PNP
- Collector-Emitter Voltage: -40V
- Emitter Base Voltage: -7V
- Collector Current: -10~-20A
- Power Dissipation: 50W
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![HCPL-0700 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC]()
HCPL-0700 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Number of Channels: 1 Channel
- Forward Current: 1.6 mA
- Forward Voltage: 1.4 V
- Reverse Voltage: 5 V
- Output Current: 60 mA
- Power Dissipation: 135 mW
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![HCPL-0701#500 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC]()
HCPL-0701#500 3750Vrms 1 Channel Optoisolator Darlington with Base Output Output 8-SOIC
Rs. 500.00Specification:-
- Package: SOIC8 (0.154", 3.90mm)
- Number of Channels: 1 Channel
- Isolation Voltage: 3750 Vrms
- Forward Current: 1.6 mA
- Forward Voltage: 1.4 V
- Reverse Voltage: 5 V
- Output Current: 60 mA
- Power Dissipation: 135 mW
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![BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126]()
BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126
Rs. 500.00Specification:-
- Package: SOT-32-3 / TO-225AA / TO-126-3
- Transistor Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -3 A
- Collector Dissipation: 30 W
- DC Current Gain (hfe): 40 to 250
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
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![RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220]()
RFP2N10L N-Channel 100V 2A 25W Through Hole Transistor TO-220
Rs. 500.00Specification:-
- Package: TO-220-3
- Transistor Type: 1 N-Channel
- Mounting Style: Through Hole
- Power Dissipation: 25W
- Continuous Drain Current: 2A
- Drain-Source Breakdown Voltage: 100V
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![MCT62SD Optoisolator Transistor Output 5000Vrms 2-Channel 8-SMD Gull Wing]()
MCT62SD Optoisolator Transistor Output 5000Vrms 2-Channel 8-SMD Gull Wing
Rs. 500.00Specification:-
- Package: SMD8 Gull Wing
- Forward Current: 60 mA
- Forward Voltage: 1.5 V
- Maximum Collector Emitter Voltage: 85 V
- Maximum Collector Current: 30 mA
- Maximum Collector Emitter Saturation Voltage: 400 mV
- Rise Time: 2.4 us
- Reverse Voltage: 25 V
- Power Dissipation: 400 mW
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![4N27SR2M Optoisolator Transistor with Base Output 4170Vrms 1-Channel 6-SMD Gull Wing (White Color)]()
4N27SR2M Optoisolator Transistor with Base Output 4170Vrms 1-Channel 6-SMD Gull Wing (White Color)
Rs. 500.00Specification:-
- Package: SMD6 Gull Wing
- Voltage Output (Max): 30V
- Voltage Isolation: 4170Vrms
- Voltage Forward: 1.18V
- Current DC Forward (If) (Max): 60 mA
- Saturation (Max): 500mV
- Operating Temperature: -40°C ~ 100°C