Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 290W
SKU: OT8542A
38N30/FQA38N30 300V 38.4A N-Channel Power MOSFET (TO-3 Package)
The 38N30/FQA38N30 is a 300V, 38.4A N-channel power MOSFET housed in a TO-3 package, designed for high-voltage, high-current switching applications. With its 300V drain-to-source voltage rating, this MOSFET is ideal for use in high-voltage power conversion, motor control, and industrial power supplies where reliable, efficient switching is required. This device can handle up to 38.4A of continuous drain current, making it suitable for applications that require large current handling. The low on-resistance ensures minimal conduction losses, resulting in improved efficiency and less heat generation during operation, even at higher currents. This feature is particularly important for applications that involve continuous current flow or operate in power-sensitive environments. The TO-3 package provides excellent thermal performance and allows for efficient heat dissipation, ensuring the MOSFET can operate at high power levels without overheating. The package's robust mechanical construction ensures reliable performance in power-intensive applications, offering durability and protection for high-stress environments.
Features:-
- Low gate charge (Typ. 90 nC)
- Low crss (Typ. 70 pF)
- Fast switching
- Ease of paralleling
