Specification:-
- Package Type: SOT-252 Package
- Maximum Continuous Collector Current: 8A
- Maximum Collector Emitter Voltage: 100V
- Maximum Emitter Base Voltage: 5V
- Maximum Collector Cut-off Current: 0.01 mA
- Operating Temperature Range: -65°C to +155°C
SKU: BH8541A1
MJD122G NPN Darlington Transistor 100V (SOT-252 Package) Pack of 10
The MJD122G is a high-voltage NPN Darlington transistor intended for use in a range of electronic circuit switching and amplification applications. This transistor, which comes in a SOT-252 package, provides good thermal performance and easy mounting. Two bipolar junction transistors (BJTs) connected in cascade form the MJD122G transistor, which is configured as an NPN Darlington pair. High current gain and superior switching characteristics make this configuration ideal for power device control and driving high current loads. The MJD122G is a space-constrained design and automated assembly process solution because of its small footprint and SOT-252 surface-mount package housing. For improved heat dissipation, the package has a sizable metal tab, which guarantees dependable performance at high power levels. The MJD122G transistor can tolerate moderate to high voltage levels that are frequently encountered in power supply, industrial, and automotive applications, with a maximum collector-emitter voltage (VCEO) of 100V. Robustness and dependability in challenging operating conditions are guaranteed by this high voltage rating.
Applications:-
- Motor Control Circuits
- Relay and Solenoid Drivers
- Power Supply Regulation
- High-Voltage Switching Circuits
- Audio Amplifiers
- Lighting Control Systems
Features:-
- High Voltage Rating for Robustness
- Compact SOT-252 Package for Easy Mounting
- High Current Gain for Efficient Signal Amplification
- Low Saturation Voltage for Enhanced Efficiency
- Built-In Protection Diode for Reliable Operation
- Versatile Applications in Various Electronic Circuits