MJD122G NPN Darlington Transistor 100V (SOT-252 Package) Pack of 10
Specification:-
- Package Type: SOT-252 Package
- Maximum Continuous Collector Current: 8A
- Maximum Collector Emitter Voltage: 100V
- Maximum Emitter Base Voltage: 5V
- Maximum Collector Cut-off Current: 0.01 mA
- Operating Temperature Range: -65°C to +155°C
SKU: BH8541A1
MJD122G NPN Darlington Transistor 100V (SOT-252 Package) Pack of 10
The MJD122G is a high-voltage NPN Darlington transistor designed for various switching and amplification applications in electronic circuits. Packaged in the SOT-252 format, this transistor offers convenient mounting and excellent thermal performance. The MJD122G transistor is configured as an NPN Darlington pair, consisting of two bipolar junction transistors (BJTs) connected in cascade. This configuration provides high current gain and excellent switching characteristics, making it suitable for driving high-current loads and controlling power devices. Housed in a SOT-252 surface-mount package, the MJD122G offers a compact footprint, making it ideal for space-constrained designs and automated assembly processes. The package features a large metal tab for enhanced heat dissipation, ensuring reliable operation under high-power conditions. With a maximum collector-emitter voltage (VCEO) of 100V, the MJD122G transistor can withstand moderate to high voltage levels commonly encountered in industrial, automotive, and power supply applications. This high voltage rating ensures robustness and reliability in demanding operating environments.
Applications:-
- Motor Control Circuits
- Relay and Solenoid Drivers
- Power Supply Regulation
- High-Voltage Switching Circuits
- Audio Amplifiers
- Lighting Control Systems
Features:-
- High Voltage Rating for Robustness
- Compact SOT-252 Package for Easy Mounting
- High Current Gain for Efficient Signal Amplification
- Low Saturation Voltage for Enhanced Efficiency
- Built-In Protection Diode for Reliable Operation
- Versatile Applications in Various Electronic Circuits