ALL ELECTRONICS COMPONENTS
Showing 1–12 of 6986 results
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GBJ6, GBJ20005 20A 50V Bridge Rectifiers Diode pack of 2pcs
Rs. 129.00Specification
- Case : GBJ6
- Maximum respective peak reverse voltage : 50v
- Maximum average rectified current : 20.0A
- Maxim reverse current : 5.0µA
- Non-Repetitive Peak Forward Surge Current : 350A
- Maxim forward voltage : 1.1V
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MCP2515 CAN Controller Interface IC (DIP-18 Package)
Rs. 269.00Specification:-
- Wide operating voltage: 2.7V to 5.5V
- All inputs and outputs w.r.t. VSS: -0.6V to VDD +1.0V
- Storage temperature: -65°C to +150°C
- Ambient temp. with power applied: 65°C to +125°C
- Soldering temperature of leads (10 seconds): +300°C
- Operating temperature range: -40°C to +125°C
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5KP33A 10µA ,R-6 Transient Voltage Suppressor Pack of 100
Rs. 829.00Specification:
- Minimum Breakdown voltage: 36.7V
- Maximum Breakdown voltage: 40.6V
- Maximum Reverse Leakage Current: 10µa
- Maximum peak pulse current: 94A
- Maximum clamping voltage: 53.3V
- Power Dissipation: 5000W
- Package: R-6
- Minimum Breakdown voltage: 36.7V
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0.0012μF 122J 100V CBB18 Polypropylene Film Capacitor Pack of 5pcs
Rs. 39.00Specification:-
- Rated voltage : 100V
- Dimensions = 11.0mm(W)
- Dimensions = 10.0mm(H)
- Dimensions = 6.0mm(T)
- Dimensions = 5.5mm(P)
- Dimensions = 0.5(d)
- Standard = GB10188 (IEC384-13)
- Climatic Category = 40/085/21
- Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)
- Rated voltage : 100V
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74HC00 Quad 2 Input NAND Gate SMD IC
Rs. 29.00Specification:-
- Mounting: SMD
- Number of: 14 Pins
- Voltage Rating: 4.75 to 5.25V
- Storage Temperature Range: 0°C to + 70°C
- Large Operating Voltage Range
- Four Independent NOR Gates
- High-Speed Low Power CMOS Type
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1.5KE8.2A 200µA, DO-201AD Transient Voltage Suppressor Pack of 100
Rs. 659.00Specification:
- Minimum Breakdown voltage: 7.79V
- Maximum Breakdown voltage: 8.61V
- Maximum Reverse Leakage Current: 200µa
- Maximum peak pulse current: 124A
- Maximum clamping voltage: 12.1V
- Maximum Temperature Coefficient of VBR: 0.065%
- Power Dissipation: 1500W
- Package: DO-201AD
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1.5KE15A 5.0µA, DO-201AD Transient Voltage Suppressor Pack of 100
Rs. 659.00Specification:
- Minimum Breakdown voltage: 14.3V
- Maximum Breakdown voltage: 15.8V
- Maximum Reverse Leakage Current: 5.0µa
- Maximum peak pulse current: 71.0A
- Maximum clamping voltage: 21.2V
- Maximum Temperature Coefficient of VBR: 0.084%
- Power Dissipation: 1500W
- Package: DO-201AD
- Minimum Breakdown voltage: 14.3V
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0.018μF 183J 250V CBB18 Polypropylene Film Capacitor Pack of 5pcs
Rs. 39.00Specification:-
- Rated voltage : 250V
- Dimensions = 19.0mm(W)
- Dimensions = 14.0mm(H)
- Dimensions = 9.0mm(T)
- Dimensions = 12.5mm(P)
- Dimensions = 0.6(d)
- Standard = GB10188 (IEC384-13)
- Climatic Category = 40/085/21
- Dissipation Factor = ≤ 0.0008 (20°C, 1KHz)
- Rated voltage : 250V
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SMA, SMAJ8.5, 8.5V Surface Mount Transient Voltage Suppressors Rectifiers Diode pack of 5pcs
Rs. 29.00Specification
- Case : SMA
- Maximum respective peak reverse voltage : 8.5v
- Maximum average rectified current : 18.9A
- Maxim reverse current : 20µA
- Maxim forward voltage : 15.9V
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SMAJ150 400W Surface Mount Transient Voltage Suppressors Pack of 5pcs
Rs. 29.00Specification:-
- Package : SMA/SMA(G)
- Minimum Breakdown voltage : 167.00V
- Maximum Breakdown voltage : 204V
- Stand-off voltage : 150.0
- Maximum reverse leakage current : 5.0
- Maximum peak pulse current : 1.1A
- Maximum clamping voltage : 268.0V
- Power dissipation : 400W
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AD620 Low Power Instrumentation Amplifier SMD IC
Rs. 769.00Specification:-
- Supply Voltage: ±18 V
- Internal Power Dissipation: 650 mW
- Input Voltage: ±VS
- Differential Input Voltage: 25 V
- Storage Temperature Range: −65˚C to +150˚C
- Lead Temperature DIP: 300˚C
- Wide power supply range (±2.3 V to ±18 V)
- Low power, 1.3 mA max supply current
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IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)
Rs. 119.00Specification:-
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.78V/°C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 0.85Ω
- Forward Transconductance min : 5.3S