ALL ELECTRONICS COMPONENTS

GNJ6, GBJ1502 15A 200V Bridge Rectifiers Diode pack of 2pcs

Specification

1. Case : GNJ6
2. Maximum respective peak reverse voltage : 200v
3. Maximum average rectified current : 15.0A
4. Maxim reverse current : 10.0µA
5. Non-Repetitive Peak Forward Surge Current : 200A
6. Maxim forward voltage : 1.1V

5KP60 10µA ,R-6 Transient Voltage Suppressor Pack of 100

Specification:

• Minimum Breakdown voltage: 66.7V
• Maximum Breakdown voltage: 81.5V
• Maximum Reverse Leakage Current: 10µa
• Maximum peak pulse current: 47A
• Maximum clamping voltage: 107.0V
• Power Dissipation: 5000W
• Package: R-6

SR140S/SB140S 40V ,A-405 Schottky Barrier Rectifiers Pack of 5pcs

Specification:-

• Maximum repetitive peak reverse voltage : 40V
• Maximum average rectified current : 1.0A
• Peak forward surge current 8.3ms single half sine- wave : 40A
• Maximum reverse current @ VRRM TA = 25°C : 0.5mA 
• Package : A-405

SMBJ33 600W Surface Mount Transient Voltage Suppressors Pack of 5pcs

Specification:-

1. Package : SMB/SMB(G)
2. Minimum Breakdown voltage : 36.7V
3. Maximum Breakdown voltage : 44.9V
4. Stand-off voltage : 33.0
5. Maximum reverse leakage current : 5.0
6. Maximum peak pulse current : 10.2A
7. Maximum clamping voltage : 59.0V
8. Power dissipation : 600W

CD4068 CMOS 8-Input NAND/AND Gate IC (DIP-14 Package)

Specification:-

• High Voltage Type (20V Rating)
• Medium Speed Operation – TPHL, TPLH = 75ns (Typ.) at VDD = 10V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V
• Temperature Range; 100nA at 18V and +25°C
• Noise Margin (Over Full Package/Temperature Range) – 1V at VDD = 5V – 2V at VDD = 10V – 2.5V at VDD = 15V

MCP4802 8 Bit Dual Voltage Digital to Analog Converter (DAC) with SPI Interface IC (DIP-8 Package)

Specification:-

• Supply Voltage: 2.7V to 5.5V
• Current at Input Pins: ±2 m A
• Current at Supply Pins: ±50 m A
• Current at Output Pins: ±25 m A
• All Inputs and Outputs w.r.t. VSS: VSS –0.3V to VDD+0.3V
• Storage Temperature: -65°C to +150°C
• Ambient temperature with power applied: –55°C to +125°C
• Soldering temperature of leads (10 seconds): +300°C

P4KE170A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 162.0 , Max(V) 179.0
• Maximum peak current : 1.8A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41

P4KE75A 5.0µA ,DO-41 Transient Voltage Suppressors Pack of 100

Specification:-

• Breakover voltage : Min(V) 71.3 , Max(V) 78.8
• Maximum peak current : 4.1A
• Maximum reverse leakage current @ VRRM : 5.0µA
• Power dissipation :400W
• Package : DO-41

330uf / 10V Aluminum Electrolytic Capacitors (6.3 X 11)mm pack of 5 pcs

Specification

1. Terminals:2
2. Material: Aluminum
3. Capacitor Size: 6.3 X 11mm
4. Voltage Rating :  10V
5. Capacitance: 330uf
6. Capacitance tolerance : ±20%(M)

MM3Z5228B 300mW ,SOD-323 Packaging Diodes Pack of 5pcs

Specification:

• Power Dissipation : 300 mW
• Nominal Zener Voltage : 3.9V
• Minimum Zener voltage : 3.71V
• Maximum Zener voltage : 4.1V
• Maximum Reverse Current : 10µa
• Package : SOD-323

IRF440 500V 8.8A N-Channel Power MOSFET (TO-247 Package)

Specification:-

• Drain-Source Breakdown Voltage min : 500V
• Temperature Coefficient type : 0.78V/°C
• Gate-Source Threshold Voltage min : 2.0V
• Gate-Source Threshold Voltage max : 4.0V
• Gate-Source Leakage max : +100nA
• Drain-Source On-State Resistance : 0.85Ω
• Forward Transconductance min : 5.3S

MJD122G J122G 8A / 100V NPN Darlington Transistor (SOT-252 Package) Pack of 10

Specification:-

• Mounting Style: :SMD/SMT
• Transistor Polarity: NPN
• Emitter-Base Voltage VEBO: 5 V
• Collector-Base Voltage VCBO: 100 V
• Maximum DC Collector Current: 8 A
• Maximum Collector Cut-off Current: 10 uA
• Collector-Emitter Voltage VCEO Max: 100 V
• Operating Temperature: :-65°C to +150°C