MJD122G J122G 8A / 100V NPN Darlington Transistor (SOT-252 Package) Pack of 10
Specification:-
- Mounting Style: :SMD/SMT
- Transistor Polarity: NPN
- Emitter-Base Voltage VEBO: 5 V
- Collector-Base Voltage VCBO: 100 V
- Maximum DC Collector Current: 8 A
- Maximum Collector Cut-off Current: 10 uA
- Collector-Emitter Voltage VCEO Max: 100 V
- Operating Temperature: :-65°C to +150°C
SKU: EL8541A
MJD122G J122G 8A / 100V NPN Darlington Transistor (SOT-252 Package) Pack of 10
The MJD122G (J122G) 8A/100V NPN Darlington Transistor is a high-performance semiconductor device designed for use in a variety of power and switching applications. This NPN Darlington transistor features a built-in base-emitter resistor and offers high current gain, making it an excellent choice for driving high-current loads with minimal input. With a maximum collector current rating of 8A and a voltage rating of 100V, the MJD122G is suitable for medium-power applications, including motor drivers, relay drivers, and power management systems. Its Darlington configuration provides high gain, simplifying circuit design by reducing the need for additional stages. The transistor is housed in a TO-252 (DPAK) surface-mount package, which ensures efficient heat dissipation and compatibility with automated assembly processes. Its low saturation voltage and fast switching characteristics make it a reliable and efficient choice for applications requiring speed and efficiency.
Feature:-
- Durable and Reliable
- High DC current gain
- High Voltage Rating for Robustness
- Compact SOT-252 Package for Easy Mounting
- Low Saturation Voltage for Enhanced Efficiency
- Built-In Protection Diode for Reliable Operation
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