ALL ELECTRONICS COMPONENTS
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![24C128 128K bit Serial I2C Bus EEPROM IC (DIP-8 Package)]()
24C128 128K bit Serial I2C Bus EEPROM IC (DIP-8 Package)
Rs. 99.00Specification:-
- Voltage on Any Pin concerning Ground: -1.0V to +7.0V
- Storage temperature: -65°C to +150°C
- Operating Temperature: -55°C to +125°C
- Maximum Operating Voltage: 6.25V
- DC Output Current: 5.0 mA
- 1 MHz (5V), 400 kHz (2.7V, 2.5V) and 100 kHz (1.8V) Compatibility
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![24C64 64K bit Serial I2C Bus EEPROM IC (DIP-8 Package)]()
24C64 64K bit Serial I2C Bus EEPROM IC (DIP-8 Package)
Rs. 39.00Specification:-
- Supply Voltage: -0.5 to +6.5 V
- Voltage on Any Pin: -0.5 to Vcc + 0.5 V
- Temperature Under Bias: -55 to +125°C
- Storage Temperature: -65 to +150°C
- Output Current: 5 mA
- Wide Voltage Operation: Vcc = 1.8V to 5.5V
- 400 KHz (2.5V) and 1MHz (5.0V) Compatible
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![IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRFB4110 100V 180A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 159.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 370W
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![IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF3710 100V 57A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 49.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 200W
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![IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)]()
IRF1407 75V 130A N-Channel HEXFET Power MOSFET (TO-220 Package)
Rs. 89.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 130A
- Drain-Source Resistance (Rds On): 7.8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 250 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 330W
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![BSS138 50V N-Channel Enhancement Mode MOSFET]()
BSS138 50V N-Channel Enhancement Mode MOSFET
Rs. 29.00Specification:-
- Drain-Source Voltage: 50 V
- Gate-Source Voltage: ± 20 V
- Drain Current Continuous: 200 mA
- Drain Current Pulsed (tp≤10µS): 800 mA
- Drain Power Dissipation: 225 mW
- Thermal Resistance, Junction to Ambient: 556°C/W
- Storage Temperature Range: -55 to +150 °C
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![IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package]()
IRFP9240 200V 12A P-Channel Power MOSFET TO-247 Package
Rs. 199.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): -12A
- Drain-Source Resistance (Rds On): 500mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 44 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![24LC256 256K bit Serial I2C Bus EEPROM IC (DIP-8 Package)]()
24LC256 256K bit Serial I2C Bus EEPROM IC (DIP-8 Package)
Rs. 69.00Specification:-
- Single Supply with Operation Down to 2.5V
- All inputs and outputs w.r.t. VSS: -0.6V to VCC +1.0V
- Storage temperature: -65°C to +150°C
- Ambient temperature with power applied: -40°C to +125°C
- ESD protection on all pins: ≥ 4 kV°C
- 100 kHz, 400 kHz and 1 MHz Compatibility
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![2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)]()
2SK3569 600V 10A N-Channel Power MOSFET (TO-220F Package)
Rs. 99.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 42 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 45W
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![IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)]()
IRFP240 200V 20A N-Channel Power MOSFET (TO-247 Package)
Rs. 139.00Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): -200V
- Continuous Drain Current (Id): 20A
- Drain-Source Resistance (Rds On): 0.18 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 – 175°C
- Power Dissipation (Pd): 150W
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![330K ohm (334) 1206 High Power SMD Thick Film Chip Resistor Pack of 5000]()
330K ohm (334) 1206 High Power SMD Thick Film Chip Resistor Pack of 5000
Rs. 899.00Specification:-
- Case type: 1206
- Resistance: 330K
- Tolerance : ± 5%
- Power Rating (Watt): 0.25W, 1/4W
- Operating Temperature: -55 °C to +155 °C
- Element type: Thick film chip
- Operating voltage range: 180V to 220V
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![62256 32Kx8 bit CMOS Static RAM IC (DIP-28 Package)]()
62256 32Kx8 bit CMOS Static RAM IC (DIP-28 Package)
Rs. 139.00Specification:-
- High speed: 55 ns
- Voltage range: 4.5 V to 5.5 V operation
- Supply voltage to ground potential: –0.5 V to +7.0 V
- Storage temperature: -65°C to +150°C
- Ambient temperature with power applied : -55°C to +125°C
- DC voltage applied to outputs in high Z State: –0.5 V to VCC + 0.5 V
- DC input voltage: –0.5 V to VCC + 0.5 V