TRANSISTORS

BU407 NPN Transistors 150V (TO-220 Package) Pack of 100

• Transistor Polarity - NPN
• Collector-Emitter Voltage (VCEO) - 150V
• Continuous Base Current (IB) - 4A
• Continuous Collector Current (IC) - 5A
• Emitter cut-off current (IC) - 500mA
• Operating Temperature Range - (-65 - 150°C)
• Transition Frequency (fT) - 10MHz

MPSA55S PNP Transistors -60V (SOT-23 Package) Pack of 10

Specification :-

• Collector-emitter voltage:  -60V
• Collector current:  -500mA
• Operating temperature range: -65℃ to +150℃
• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 80-250
• Max Transition Frequency (fT): 50 MHz

Si2301ds -20VSOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage -  -20v
• Drian Current - ±8mA
• Static Drain–Source On Resistance - RDS(on)1=VGS= -4.5V ID= 2.8A mA
• Fast Switching speed
• Case: SOT23

XP152A12COMR -20V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage -  -20v
• Drian Current - ±8mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=4.0V ID=400mA
• Fast Switching speed
• Case: SOT23

A92 High voltage PNP transistors box of 2000pcs

Specifications

1. Transistor type:  High Voltage PNP Transistor
2. Collector-Emitter voltage:  300 V
3. Emitter Base Voltage  :  5V
4. Continuous Collector current  :  500mA
5. Transition Frequency  :  50MHz

T1117-5 SOT 223 Voltage Regulator Pack of 100pcs

Specification :-

1. High-Efficiency Linear Regulators
2. Post Regulators for Switching Supplies
3. Built-in thermal shutdown
4. Output Voltage- 4.950 - 5.050

T1117-1.8 SOT 223 Voltage Regulator Pack of 100pcs

Specification :-

1. High-Efficiency Linear Regulators
2. Post Regulators for Switching Supplies
3. Built-in thermal shutdown
4. Output Voltage- 1.782 - 1.818

FMS4 PNP SOT23-5L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: PNP
• Maximum Collector-Base Voltage |BVCBO|: 120 V
• Maximum Collector-Emitter Voltage |BVCEO|: 120 V
• Maximum Emitter-Base Voltage |BVEBO|: 50V
• Forward Current Transfer Ratio (hFE), MIN: 120

C2330 Epitaxial NPN amplifier transistors pack of 100pcs

Specifications

1. Transistor type  :  Epitaxial NPN transistor
2. Collector-Emitter Volt  :  400V
3. Collector-Base Volt  :  400V
4. Collector Current  :  0.1A
5. Power Dissipation  :  1000mW
6. Current-Gain-Bandwidth  :  50MHz

MMBTA92LT1 PNP SOT-23 Bipolar Transistors Pack of 5

Specification:-

1. Type of transistor: PNP
2. Polarity: Bipolar
3. Collector-emitter voltage (BVCEO): 300V
4. Power dissipation: 300mW
5. Case: SOT23
6. Frequency: 50MHz
7. Gain H(fe): 100/200
8. Collector current:  300mA

D882 Medium power NPN transistors box of 2000pcs

Specifications

1. Transistor type  :  D882 Medium power NPN transistor
2. Max Collector Current  :  3A
3. Max Collector-Emitter Voltage  :  30V
4. Max Collector-Base Voltage  :  40V
5. Max Emitter-Base Voltage  :  5V
6. Max Collector Dissipation  :  10 Watts

Si2306DS 30V SOT-23 Field Effect Transistors Pack of 10pcs

Specification :-

• Drian Source Voltage - 30v
• Drian Current - 3500mA
• Static Drain–Source On Resistance - RDS(on)1=VGS=10V ID=3500mA
• Fast Switching speed
• Case: SOT23