TRANSISTORS

2SD882 NPN SOT23-3L Bipolar Transistors Pack of 5pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 40 V
• Maximum Collector-Emitter Voltage |BVCEO|: 30 V
• Maximum Emitter-Base Voltage |BVEBO|: 6V
• Forward Current Transfer Ratio (hFE), MIN: 60
• Collector Dissipation: Pcw =300mW

BC337 Amplifiers NPN transistors box of 2000pcs

Specification

1. Transistor type  :  General Purpose NPN Amplifier Transistor
2. Current Gain  :  100 to 630
3. Continuous Collector current  :  800mA
4. Collector-Emitter voltage  :  45 V
5. Collector-Base voltage  :  50V
6. Emitter Base Voltage  :  5V

BFS20 25mA 20V SOT-23 NPN Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: NPN
2. Polarisation: bipolar
3. Collector-emitter voltage: 20V
4. Power dissipation: 250mW
5. Case: SOT23
6. Frequency: 275MHz
7. Gain H(fe): 40/120
8. Collector current:  25mA

2SA1037 150mA 50V SOT-23 PNP Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: PNP
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 200 mW
5. Case: SOT23
6. Frequency: 120MHz
7. Gain H(fe): 120/560
8. Collector current: 150mA

BC856LT1 100mA 65V SOT-23 PNP Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: PNP
2. Polarisation: bipolar
3. Collector-emitter voltage: 65V
4. Power dissipation: 250mW
5. Case: SOT23
6. Frequency: 100MHz
7. Gain H(fe): 125/475
8. Collector current:  100mA

KTA1504 150mA 50V SOT-23 PNP Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: PNP
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 150mW
5. Case: SOT23
6. Frequency: 80MHz
7. Gain H(fe): 70/400
8. Collector current:  150mA

2SC2734 NPN SOT23-3L Bipolar Transistors Pack of 100pcs

Specification :-

• Polarity: NPN
• Maximum Collector-Base Voltage |BVCBO|: 20 V
• Maximum Collector-Emitter Voltage |BVCEO|: 11 V
• Maximum Emitter-Base Voltage |BVEBO|: 3V
• Forward Current Transfer Ratio (hFE), MIN: 20
• Collector Dissipation: Pcw =150mW

DOP55NF06 NPN Power Transistor 130 V (TO-220 Package) Pack of 5

Specification:-

• Part Number: DOP55NF06
• Package Type: TO-220
• Transistor Type: NPN
• Mounting Type: THT
• Voltage: 130 V
• Operating Temperature Range: -55°C to 150°C

BF421 High voltage PNP transistors box of 2000pcs

Specification

1. Transistor type  :  High voltage PNP transistor
2. Maximum Collector Power Dissipation  :   0.83W
3. Maximum Collector-Base Voltage  :  300V
4. Maximum Collector-Emitter Voltage  :  300V
5. Maximum Emitter-Base Voltage  :  5V
6. Maximum Collector Current   :  0.025A
7. Transition Frequency  :  60 MHz
8. Collector Capacitance  :  1.6 pF

PMBT5551 300mA NPN Transistors 160V (SOT-23 Package) Pack of 10

Specification:-

• Type of transistor: NPN
• Collector-Emitter Voltage, max:  160 V
• Collector-Base Voltage, max: 180 V
• Transition Frequency, min: 100 MHz
• Maximum Collector Current: 0.3 A
• Maximum Collector Power Dissipation (Pc): 0.25 W
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: SOT-23

BC846S NPN Transistors 65V (SOT-23 Package) Pack of 10

Specification :-

• Transistor Type  :  NPN transistor
• DC Current Gain (hFE) : 110-800
• Max Collector-Emitter Voltage (VCE): 5V
• Max Transition Frequency (fT):100 MHz
• Collector-Emitter Voltage (VCEO) : 65V
• Operating temperature range: -65℃ to +150℃

A733LT1 150mA 50V SOT-23 PNP Bipolar transistors pack of 5pcs

Specification

1. Type of transistor: PNP
2. Polarisation: bipolar
3. Collector-emitter voltage: 50V
4. Power dissipation: 200mW
5. Case: SOT23
6. Frequency: 50MHz
7. Gain H(fe): 120/475
8. Collector current:  150mA