TO-126 TRANSISTOR

C2482 High voltage NPN transistors box of 2000pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  300V
3. Collector-Base Voltage  :  300V
4. Emitter-Base Voltage  :  7V
5. Collector Current  :  0.1A
6. Collector Dissipation  :  - 0.9W
7. DC Current Gain  :  - 30 to 150

9015 Bipolar PNP transistor packs of 100pcs

Specification

1. Transistor Type  :  9015 Bipolar PNP transistor
2. Max Collector Current  :  -100mA
3. Max Collector-Emitter Voltage  :  -45V
4. Max Collector-Base Voltage  :  -50V
5. Max Emitter-Base Voltage  :  -5V
6. Max Collector Dissipation  :  400mW

BD140 General purpose PNP transistors box of 2000pcs

Specification

1. Transistor Type:  PNP transistor
2. Max Collector Current:  -1.5A
3. Max Collector-Emitter Voltage  :  –80V
4. Max Collector-Base Voltage  :  –80V
5. Max Emitter-Base Voltage  :  –5V

C1674 Epitaxial NPN silicon transistors box of 2000pcs

Specification:-

1. Transistor type  :  High voltage NPN transistor
2. Maximum Collector Power Dissipation  :   0.25W
3. Maximum Collector-Base Voltage  :  30V
4. Maximum Collector-Emitter Voltage  :  20V
5. Maximum Emitter-Base Voltage  :  4V
6. Maximum Collector Current   :  0.02A
7. Transition Frequency  :  300 MHz
8. Collector Capacitance  :  2 pF

2N5551 Amplifier NPN transistors box of 2000pcs

Specification

1. Transistor type  :  Amplifier NPN Transistor
2. High DC Current Gain  :  80
3. Continuous Collector current  :  600mA
4. Collector-Emitter voltage  :  160 V
5. Collector-Base voltage  :  180V
6. Emitter Base Voltage  :  6V
7. Transition Frequency  :  100MHz

8050 Audio amplifier NPN transistors box of 2000pcs

Specifications

1. Transistor Type  :  NPN
2. Collector Current  :  0.7A or 700 mA
3. Max Collector-Emitter Voltage (V_CE)  :  20V
4. Max Collector-Base Voltage (V_CB)  :  30V
5. Max Emitter-Base Voltage (VBE)  :  5V
6. Max Collector Dissipation (Pc)  :  1 W
7. Max Transition Frequency  :  100 MHz

BF422 Bipolar High voltages NPN transistors box of 2000pcs

Specification

1. Transistor type:  High voltage NPN transistor
2. Maximum Collector power dissipation:   0.83W
3. Maximum Collector-Base voltage  :  250V
4. Maximum Collector-Emitter voltage  :  250V
5. Maximum Emitter-Base voltage  :  5V
6. Maximum Collector current   :  0.05A
7. Transition frequency  :  60 MHz
8. Collector capacitance  :  1.6 pF

C2383 Epitaxial NPN silicon's transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Epitaxial NPN Transistor
2. Power dissipation  :  0.9W
3. Collector current  :  1A
4. Working temperature  :  -55O C to +150O.
5. Lead-free
6. Voltage consumption  :  160V.

C2060 low powered NPN transistors box of 2000pcs

Specification

1. Transistor type:  NPN transistor
2. Collector-base breakdown voltage:  40V
3. Collector-emitter breakdown voltage  :  32V
4. Emitter-base breakdown voltage  :  5V
5. DC current gain  :  400

2N2222 General purpose NPN transistors box of 2000pcs

Specifications

• Transistor Type  :  Bipolar high current NPN Transistor
• DC Current Gain  :  100
• Continuous Collector current  :  800mA
• Emitter Base Voltage  :  6V
• Collector Emitter Voltage  :  30V
• Base Current  :  5mA

2N5401 Power switch PNP transistors box of 2000pcs

Specifications:-

1. Transistor type  :  Power switch PNP transistor
2. DC Current Gain  :  100
3. Maximum voltage across collector and emitter  :  150V
4. Maximum current allowed trough collector  :  600mA
5. Maximum voltage across collector and base  :  160 V
6. Maximum voltage across base and emitter  :  5V

2N3904 Bipolar General purpose NPN transistors box of 2000pcs

Specification

1. Transistor type  : Bipolar NPN Transistor
2. DC Current Gain  :  300
3. Continuous Collector current  :  200mA
4. Base- Emitter Voltage  :  6V
5. Collector-Emitter Voltage  :  40V
6. Collector-Base Voltage  :  60V