TO-126 TRANSISTOR

C1874 Epitaxial NPN transistors box of 2000pcs

Specifications

1. Transistor type  :  Epitaxial NPN transistor
2. Collector - Emitter voltage  :  45V
3. Emitter - base voltage  :  5V
4. Collector current  :  800mA
5. Continuous power dissipation  :  625mW

BF442 General purpose NPN transistors box of 2000pcs

Specification

1. Transistor type  :  NPN transistor
2. Collector-Emitter Voltage  :  250V
3. Collector-Base Voltage  :  250V
4. Emitter-Base Voltage  :  5V
5. Collector Current  :  0.05A
6. Collector Dissipation :  0.8W
7. DC Current Gain  :  50
8. Transition Frequency  :  60MHz

9015 Bipolar PNP transistors box of 2000pcs

Specification

1. Transistor Type  :  9015 Bipolar PNP transistor
2. Max Collector Current  :  -100mA
3. Max Collector-Emitter Voltage  :  -45V
4. Max Collector-Base Voltage  :  -50V
5. Max Emitter-Base Voltage  :  -5V
6. Max Collector Dissipation  :  400mW

BF421 High voltage PNP transistors box of 2000pcs

Specification

1. Transistor type  :  High voltage PNP transistor
2. Maximum Collector Power Dissipation  :   0.83W
3. Maximum Collector-Base Voltage  :  300V
4. Maximum Collector-Emitter Voltage  :  300V
5. Maximum Emitter-Base Voltage  :  5V
6. Maximum Collector Current   :  0.025A
7. Transition Frequency  :  60 MHz
8. Collector Capacitance  :  1.6 pF

5 mm infrared receivers black color 2 pins pack of 100pcs

Specification

1. Spectral range  :  700-1050
2. Light Current  :   ≥3mA
3. Breakdown Voltage  :  30
4. Maximum forward current   :  25mA
5. Power dissipation  :  100
6. Maximum reverse voltage  :  5V
7. Maximum Forward Voltage  :  1.2 V-1.3V
8. Package includes : 100 pieces

BC337 Amplifiers NPN transistors box of 2000pcs

Specification

1. Transistor type  :  General Purpose NPN Amplifier Transistor
2. Current Gain  :  100 to 630
3. Continuous Collector current  :  800mA
4. Collector-Emitter voltage  :  45 V
5. Collector-Base voltage  :  50V
6. Emitter Base Voltage  :  5V

A42 Bipolar NPN transistors box of 2000pcs

Specification

1. Transistor type  :  Bipolar NPN Transistor
2. DC Current Gain  :  40
3. Continuous Collector current  :  500mA
4. Base- Emitter Voltage  :  6V
5. Collector-Emitter Voltage  :  300V

BD138-16 PNP 60V 1.5A 1.25W Through Hole Bipolar Transistor TO-126

Specification:-

• Package: SOT-32-3 / TO-225AA / TO-126-3
• Transistor Type: PNP
• Max Collector-Emitter Voltage: -60V
• Max Collector-Base Voltage: -60V
• Max Emitter-Base Voltage: -5V
• Max Collector Dissipation: 12.5 Watt
• Max Transition Frequency: 190 MHz

2SB772 30V 3A 100MHz Bipolar (BJT) Transistor PNP Through Hole SOT-32-3 / TO-225AA / TO-126-3

Specification:-

• Package/Case: SOT-32-3 / TO-225AA / TO-126-3
• Mount: Through Hole
• Number of Pins: 3
• Polarity:  PNP
• Power Max: 12.5 W
• Frequency - Transition: 100 MHz
• Current Collector  (Max): 3A
• Voltage Collector Emitter Breakdown (Max): 30V

BD179 NPN 80V 3A 3MHz 30W Through Hole Bipolar Transistor TO-126

Specification:-

• Package: SOT-32-3 / TO-225AA / TO-126-3
• Collector-Base  Voltage: 80V
• Collector-Emitter  Voltage: 80V
• Emitter-Base Voltage: 5V
• Collector  Current: 3A
• Base Current: 7A
• Total Dissipation: 30W
• Storage Temperature: -65 to 150 C

BD137-16 60V 1.5A 1.25W Through Hole Bipolar Transistor NPN SOT-32-3 / TO-225AA / TO-126-3

Specification:-

• Package/Case: SOT-32-3 / TO-225AA / TO-126-3
• Type of transistor: NPN
• Polarisation: bipolar
• Collector-emitter voltage: 60V
• Collector current: 1.5A
• Power dissipation: 12.5W

BD178 PNP 60V 3A 3MHz 3W Through Hole Bipolar Transistor TO-126

Specification:-

• Package: SOT-32-3 / TO-225AA / TO-126-3
• Transistor Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -3 A
• Collector Dissipation: 30 W
• DC Current Gain (hfe): 40 to 250
• Transition Frequency, min: 3 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C