20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 650V
- Continuous Drain Current (Id): 20.7A
- Drain-Source Resistance (Rds On): 190Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 208W
SKU: MO8542A
20N60 650V 20.7A N-Channel Power MOSFET (TO-247 Package)
The 20N60 is a high-voltage N-channel power MOSFET designed to handle demanding power switching applications. With a drain-to-source voltage of 650V and a continuous drain current of 20.7A, this MOSFET is suitable for high-voltage and high-current operations, making it ideal for power conversion, motor control, and industrial applications. Packaged in a TO-247 package, the 20N60 offers robust thermal management and efficient power dissipation. Its low on-resistance helps reduce conduction losses, improving overall efficiency in switching circuits, and ensuring that power losses are minimized during operation. This characteristic is particularly beneficial for high-power applications like AC-DC power supplies, uninterruptible power supplies (UPS), and DC-DC converters. The 20N60 also features fast switching speeds, which makes it well-suited for use in high-frequency switching applications such as motor drives and inverters. The device’s high-voltage capability enables it to withstand voltage spikes and transients, providing extra protection in demanding electrical environments.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
