23N50E N-Channel Silicon Power MOSFET
Specification:-
- Type: MOSFET
- Voltage: 500V
- Drain Current: 23A
- Reverse Recovery change: 8Micro C
- Gate source voltage: 30V
- Total power dissipation: 315W
- Operating and Storage Temperature Range: -55°C TO 150°C
SKU: YE8542A
23N50E N-Channel Silicon Power MOSFET
The 23N50E is an N-Channel Silicon Power MOSFET designed for high-performance switching applications. With a maximum drain-to-source voltage of 500V and a continuous drain current rating of 23A, it is well-suited for use in medium-to-high power systems such as switch-mode power supplies (SMPS), inverters, motor drives, and industrial power circuits. This MOSFET features low on-resistance, which reduces conduction losses and improves overall efficiency. It is optimized for fast switching, making it ideal for applications requiring high-speed operation and low switching losses. These characteristics enhance energy efficiency in consumer and industrial electronic systems. The 23N50E is typically housed in a power-efficient package like TO-220 or TO-3P, which offers excellent thermal performance and straightforward integration into PCB designs. This packaging ensures effective heat dissipation during high-power operation, ensuring reliability and longevity in demanding environments.
Features:-
- Lower RDS(on) characteristic
- More controllable switching dv/DT by gate resistance
- Smaller VGSringing waveform during switching
