2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6A
- Drain-Source Resistance (Rds On): 1.25 Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 45W
SKU: JU8542A
2SK1118 600V 6A N-Channel Power MOSFET (TO-220F Package)
The 2SK1118 is a 600V 6A N-Channel Power MOSFET housed in a TO-220F package, designed for high-efficiency switching applications in power management systems. This MOSFET offers a drain-to-source voltage rating of 600V and a continuous drain current of 6A, making it suitable for moderate power applications that require reliable switching at high voltages. The 2SK1118 is typically used in DC-DC converters, power supplies, inverters, and motor control circuits, where its high voltage capability is essential for the safe and efficient handling of electrical energy. The TO-220F package provides excellent thermal performance, ensuring that the device can dissipate heat effectively under load conditions, which is crucial for maintaining reliability in high-power circuits. This MOSFET also features a low gate threshold voltage and low on-resistance minimizing power losses during operation and increasing the overall efficiency of the system. Additionally, the 2SK1118 supports fast switching speeds, making it ideal for use in high-frequency applications.
Features:-
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
