2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)
Specification:-
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Collector Current (Ic): 8A
- Drain-Source Resistance (Rds On): 1.8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55 – 150°C
- Power Dissipation (Pd): 150W
SKU: PT8542A
2SK1120 1000V 8A N-Channel Power MOSFET (TO-3PN Package)
The 2SK1120 is a 1000V, 8A N-Channel Power MOSFET designed for high-voltage applications, typically used in power electronics where reliability and performance are crucial. It is housed in a TO-3PN package, well-known for providing excellent thermal dissipation and ruggedness, making it ideal for demanding environments. With a drain-to-source voltage rating of 1000V, the 2SK1120 can handle high voltage levels, making it suitable for applications such as motor control, power inverters, switching power supplies, and industrial equipment. Its 8A continuous drain current allows it to handle moderate current loads, providing flexibility in a range of applications, especially where medium power is required. This MOSFET is characterized by its low on-resistance, which reduces power loss during operation, ensuring greater energy efficiency. This feature is especially valuable in high-power switching circuits, as it helps to minimize heating and improve overall system efficiency.
Features:-
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
